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FDD8580-VB Product details
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Product Introduction
FDD8580-VB is a single-channel N-type MOSFET in TO-252 package, designed for high-performance switching applications. Its drain-source voltage (VDS) is as high as 20V, and the gate-source voltage (VGS) can withstand a voltage range of ±20V, suitable for various power switches and control circuits. The threshold voltage (Vth) of FDD8580-VB ranges from 0.5V to 1.5V, with extremely low on-resistance (RDS(ON)), which is 6mΩ at VGS of 2.5V and as low as 4.5mΩ at VGS of 4.5V. Its maximum drain current (ID) can reach 100A, and it uses advanced trench technology to provide excellent switching performance and high current handling capability.
FDD8580-VB is a single-channel N-type MOSFET in TO-252 package, designed for high-performance switching applications. Its drain-source voltage (VDS) is as high as 20V, and the gate-source voltage (VGS) can withstand a voltage range of ±20V, suitable for various power switches and control circuits. The threshold voltage (Vth) of FDD8580-VB ranges from 0.5V to 1.5V, with extremely low on-resistance (RDS(ON)), which is 6mΩ at VGS of 2.5V and as low as 4.5mΩ at VGS of 4.5V. Its maximum drain current (ID) can reach 100A, and it uses advanced trench technology to provide excellent switching performance and high current handling capability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO-252
- **Channel configuration**: Single N type
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=2.5V
- 4.5mΩ @ VGS=4.5V
- **Drain current (ID)**: 100A
- **Technology**: Trench
- **Package type**: TO-252
- **Channel configuration**: Single N type
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=2.5V
- 4.5mΩ @ VGS=4.5V
- **Drain current (ID)**: 100A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
With its extremely low on-resistance and high current handling capability, the FDD8580-VB is suitable for the following application fields and modules:
1. **High-efficiency power switch**: In high-efficiency power switch applications, the low on-resistance of the FDD8580-VB enables it to reduce power consumption and heat generation. This makes it ideal for use in high-efficiency power management systems such as DC-DC converters and switch mode power supplies (SMPS), providing excellent energy efficiency and stability.
2. **Motor control**: In motor drive applications such as industrial motor control and power tools, the FDD8580-VB is able to provide high current carrying capacity to support efficient motor starting and operation. Its low on-resistance helps reduce energy loss and improve the overall efficiency of the motor system.
3. **Power amplifier**: In power amplifier circuits, the high current handling capability and low on-resistance of the FDD8580-VB enable it to effectively amplify signals while reducing power consumption, making it suitable for audio amplifiers and radio frequency (RF) applications that require high power handling.
4. **Switching power module**: In switching power modules that require high current and low on-resistance, this MOSFET can be used as an efficient switching element, especially in low-voltage, high-current applications such as power distribution and load switch control.
In general, the FDD8580-VB, with its 20V drain-source voltage, up to 100A drain current and ultra-low on-resistance, is particularly suitable for high-efficiency power switching, motor control and power amplifier applications, providing excellent switching performance and energy efficiency.
With its extremely low on-resistance and high current handling capability, the FDD8580-VB is suitable for the following application fields and modules:
1. **High-efficiency power switch**: In high-efficiency power switch applications, the low on-resistance of the FDD8580-VB enables it to reduce power consumption and heat generation. This makes it ideal for use in high-efficiency power management systems such as DC-DC converters and switch mode power supplies (SMPS), providing excellent energy efficiency and stability.
2. **Motor control**: In motor drive applications such as industrial motor control and power tools, the FDD8580-VB is able to provide high current carrying capacity to support efficient motor starting and operation. Its low on-resistance helps reduce energy loss and improve the overall efficiency of the motor system.
3. **Power amplifier**: In power amplifier circuits, the high current handling capability and low on-resistance of the FDD8580-VB enable it to effectively amplify signals while reducing power consumption, making it suitable for audio amplifiers and radio frequency (RF) applications that require high power handling.
4. **Switching power module**: In switching power modules that require high current and low on-resistance, this MOSFET can be used as an efficient switching element, especially in low-voltage, high-current applications such as power distribution and load switch control.
In general, the FDD8580-VB, with its 20V drain-source voltage, up to 100A drain current and ultra-low on-resistance, is particularly suitable for high-efficiency power switching, motor control and power amplifier applications, providing excellent switching performance and energy efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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