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FDD850N10L-VB Product details
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1. FDD850N10L-VB Product Introduction
The FDD850N10L-VB is a high-performance N-channel MOSFET in a TO252 package designed for low to medium voltage applications. With a drain-source voltage (VDS) rating of up to 100V, it is suitable for a variety of power management and switching applications. This MOSFET uses Trench technology, with low on-resistance (RDS(ON)) and excellent switching performance. Its low threshold voltage (Vth) and high current handling capability enable it to perform well in circuits that require high performance and stability.
The FDD850N10L-VB is a high-performance N-channel MOSFET in a TO252 package designed for low to medium voltage applications. With a drain-source voltage (VDS) rating of up to 100V, it is suitable for a variety of power management and switching applications. This MOSFET uses Trench technology, with low on-resistance (RDS(ON)) and excellent switching performance. Its low threshold voltage (Vth) and high current handling capability enable it to perform well in circuits that require high performance and stability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 25A | 55mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 25A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 25A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. FDD850N10L-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 57mΩ @ VGS = 4.5V
- 55mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 25A
- **Technology**: Trench
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 57mΩ @ VGS = 4.5V
- 55mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 25A
- **Technology**: Trench
Domain and module applications：
3. FDD850N10L-VB Application Fields and Modules
1. **DC-DC Converter**: FDD850N10L-VB is ideal for use in DC-DC converters such as voltage regulator modules (VRMs) and buck converters. Its low on-resistance and high current handling capability provide efficient voltage conversion and are widely used in computer power supplies and communication equipment.
2. **Power Management System**: In power management systems, this MOSFET can be used for power switches and current limiting modules. Its low on-resistance and high switching speed make it an ideal choice for power management and battery-powered systems, improving the overall efficiency and response speed of the system.
3. **Consumer Electronics**: FDD850N10L-VB is widely used in consumer electronics such as smartphones, tablets, and portable devices. Its high current handling capability and excellent switching performance enable it to support efficient power switching and protection functions, ensuring stable operation of the device under various load conditions.
4. **Motor Control**: In motor control systems, such as brushless DC motor (BLDC) drivers, the high current capability and low on-resistance of the FDD850N10L-VB make it an excellent choice for motor drive applications. It provides smooth motor starting and running performance, suitable for a variety of industrial and consumer electronics applications.
1. **DC-DC Converter**: FDD850N10L-VB is ideal for use in DC-DC converters such as voltage regulator modules (VRMs) and buck converters. Its low on-resistance and high current handling capability provide efficient voltage conversion and are widely used in computer power supplies and communication equipment.
2. **Power Management System**: In power management systems, this MOSFET can be used for power switches and current limiting modules. Its low on-resistance and high switching speed make it an ideal choice for power management and battery-powered systems, improving the overall efficiency and response speed of the system.
3. **Consumer Electronics**: FDD850N10L-VB is widely used in consumer electronics such as smartphones, tablets, and portable devices. Its high current handling capability and excellent switching performance enable it to support efficient power switching and protection functions, ensuring stable operation of the device under various load conditions.
4. **Motor Control**: In motor control systems, such as brushless DC motor (BLDC) drivers, the high current capability and low on-resistance of the FDD850N10L-VB make it an excellent choice for motor drive applications. It provides smooth motor starting and running performance, suitable for a variety of industrial and consumer electronics applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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