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FDD8453LZ-VB Product details
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FDD8453LZ-VB MOSFET Product Introduction
FDD8453LZ-VB is a high-performance single N-channel MOSFET in TO252 package. Its drain-source voltage (VDS) is 40V and the gate-source voltage (VGS) withstand voltage is ±20V, which is suitable for low to medium voltage power electronics applications. The threshold voltage (Vth) of this MOSFET is 2.5V, ensuring stable conduction at a lower gate voltage. When VGS is 4.5V, the on-resistance (RDS(ON)) is 6mΩ, and when VGS is 10V, RDS(ON) is further reduced to 5mΩ. The maximum continuous drain current (ID) is 85A, and advanced trench technology is used to achieve low conduction loss and excellent switching performance. FDD8453LZ-VB is suitable for applications with high current and high efficiency requirements.
FDD8453LZ-VB is a high-performance single N-channel MOSFET in TO252 package. Its drain-source voltage (VDS) is 40V and the gate-source voltage (VGS) withstand voltage is ±20V, which is suitable for low to medium voltage power electronics applications. The threshold voltage (Vth) of this MOSFET is 2.5V, ensuring stable conduction at a lower gate voltage. When VGS is 4.5V, the on-resistance (RDS(ON)) is 6mΩ, and when VGS is 10V, RDS(ON) is further reduced to 5mΩ. The maximum continuous drain current (ID) is 85A, and advanced trench technology is used to achieve low conduction loss and excellent switching performance. FDD8453LZ-VB is suitable for applications with high current and high efficiency requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
FDD8453LZ-VB MOSFET Detailed parameter description
- **Package type**: TO252
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 85A
- **Technology**: Trench
- **Input capacitance (Ciss)**: Low
- **Output capacitance (Coss)**: Low
- **Reverse recovery time (trr)**: Short
- **Power dissipation**: Low conduction losses and high switching efficiency
- **Operating temperature range**: -55°C to +150°C
- **Package type**: TO252
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 85A
- **Technology**: Trench
- **Input capacitance (Ciss)**: Low
- **Output capacitance (Coss)**: Low
- **Reverse recovery time (trr)**: Short
- **Power dissipation**: Low conduction losses and high switching efficiency
- **Operating temperature range**: -55°C to +150°C
Domain and module applications：
Application fields and module examples of FDD8453LZ-VB
FDD8453LZ-VB MOSFET is suitable for a variety of power electronics applications due to its high current handling capability and low on-resistance, especially in areas with high efficiency and high current requirements:
1. **Power management**: In power management systems, FDD8453LZ-VB can be used as a switching element to handle high current loads such as DC-DC converters, AC-DC power modules and power management ICs. Its low on-resistance and high current capability help improve power conversion efficiency and reduce power consumption.
2. **Motor drive**: In motor drive systems, the high current capability and low switching losses of FDD8453LZ-VB make it suitable for controlling motor drive circuits. It can be used in electric vehicles, power tools and industrial motor control systems for efficient current switching and control.
3. **LED Driver**: In high-power LED lighting systems, the FDD8453LZ-VB is able to provide stable current and is suitable for LED drivers and lighting control modules, especially in applications that require high current and high efficiency, such as commercial lighting, street lighting, and stage lighting.
4. **Load Switch**: The FDD8453LZ-VB is also suitable for high-current load switching applications, including load control of home appliances, computer power supplies, and industrial equipment. Its low RDS(ON) and high current capability help achieve stable load switching functions and efficient power transmission.
5. **Battery Management**: In the battery management system (BMS), the FDD8453LZ-VB can be used for battery charge and discharge control, ensuring efficient current management and battery protection, and is widely used in battery management of lithium-ion battery packs and other energy storage devices.
In summary, the FDD8453LZ-VB MOSFET combines high current handling capability with low on-resistance to provide excellent performance in applications with high efficiency and high current requirements.
FDD8453LZ-VB MOSFET is suitable for a variety of power electronics applications due to its high current handling capability and low on-resistance, especially in areas with high efficiency and high current requirements:
1. **Power management**: In power management systems, FDD8453LZ-VB can be used as a switching element to handle high current loads such as DC-DC converters, AC-DC power modules and power management ICs. Its low on-resistance and high current capability help improve power conversion efficiency and reduce power consumption.
2. **Motor drive**: In motor drive systems, the high current capability and low switching losses of FDD8453LZ-VB make it suitable for controlling motor drive circuits. It can be used in electric vehicles, power tools and industrial motor control systems for efficient current switching and control.
3. **LED Driver**: In high-power LED lighting systems, the FDD8453LZ-VB is able to provide stable current and is suitable for LED drivers and lighting control modules, especially in applications that require high current and high efficiency, such as commercial lighting, street lighting, and stage lighting.
4. **Load Switch**: The FDD8453LZ-VB is also suitable for high-current load switching applications, including load control of home appliances, computer power supplies, and industrial equipment. Its low RDS(ON) and high current capability help achieve stable load switching functions and efficient power transmission.
5. **Battery Management**: In the battery management system (BMS), the FDD8453LZ-VB can be used for battery charge and discharge control, ensuring efficient current management and battery protection, and is widely used in battery management of lithium-ion battery packs and other energy storage devices.
In summary, the FDD8453LZ-VB MOSFET combines high current handling capability with low on-resistance to provide excellent performance in applications with high efficiency and high current requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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