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FDD8426H-VB Product details
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Product Introduction: FDD8426H-VB is a four-pin TO-252 packaged N+P type dual MOSFET designed for bidirectional switching applications. It has a drain-source voltage (VDS) of ±30V and a gate-source voltage (VGS) of ±20V, suitable for bidirectional power switching or current control applications. The threshold voltage (Vth) of this MOSFET is 1.8V (N type) and -1.7V (P type), and it is manufactured using advanced trench technology to provide excellent switching performance. The on-resistance (RDS(ON)) of FDD8426H-VB is 10mΩ (N type) and 35mΩ (P type) at VGS of 4.5V, 7mΩ (N type) and 25mΩ (P type) at VGS of 10V, and the drain current (ID) is 65A (N type) and -35A (P type). This MOSFET is particularly suitable for high current bidirectional switching applications and can handle current flow in both directions without introducing significant power dissipation losses.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±30V | 1.8/-1.7V | 65/-35A | 7/25mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±30V | 1.8/-1.7V | 65/-35A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±30V | 1.8/-1.7V | 65/-35A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P |
Detailed parameter description
- **Package type**: TO-252-4L
- **Channel configuration**: Common drain N+P type
- **Drain-source voltage (VDS)**: ±30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**:
- N type: 1.8V
- P type: -1.7V
- **On-resistance (RDS(ON))**:
- N type:
- 10mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
- P type:
- 35mΩ @ VGS=4.5V
- 25mΩ @ VGS=10V
- **Drain current (ID)**:
- N type: 65A
- P type: -35A
- **Technology**: Trench
- **Package type**: TO-252-4L
- **Channel configuration**: Common drain N+P type
- **Drain-source voltage (VDS)**: ±30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**:
- N type: 1.8V
- P type: -1.7V
- **On-resistance (RDS(ON))**:
- N type:
- 10mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
- P type:
- 35mΩ @ VGS=4.5V
- 25mΩ @ VGS=10V
- **Drain current (ID)**:
- N type: 65A
- P type: -35A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
The bidirectional switching characteristics and high current handling capability of the FDD8426H-VB make it very useful in multiple application areas:
1. **Power management module**: In power management systems, the FDD8426H-VB can be used as a bidirectional switch to control the input and output paths of the power supply. For example, it can be used as a bidirectional switch in a battery management system to achieve efficient control of the charging and discharging process.
2. **Motor drive**: In motor drives, especially bidirectional motor control applications, this MOSFET can achieve forward and reverse current control. Its high current capability and low on-resistance help improve the efficiency and response speed of the motor control system.
3. **Inverter and power conversion equipment**: In inverters and other power conversion equipment, the FDD8426H-VB is able to handle bidirectional currents and provide stable switching performance. This makes it excel in solar inverters and other equipment that requires high current bidirectional control.
4. **Switching Mode Power Supply (SMPS)**: In a switching mode power supply, the FDD8426H-VB can be used as a bidirectional switching component to provide reliable performance in applications with high current and bidirectional current flow, especially in scenarios that require high current switching and low power consumption.
Overall, the FDD8426H-VB, with its common drain configuration, high current handling capability, and bidirectional switching characteristics, is suitable for a variety of power management and motor control applications, providing stable and efficient switching performance.
The bidirectional switching characteristics and high current handling capability of the FDD8426H-VB make it very useful in multiple application areas:
1. **Power management module**: In power management systems, the FDD8426H-VB can be used as a bidirectional switch to control the input and output paths of the power supply. For example, it can be used as a bidirectional switch in a battery management system to achieve efficient control of the charging and discharging process.
2. **Motor drive**: In motor drives, especially bidirectional motor control applications, this MOSFET can achieve forward and reverse current control. Its high current capability and low on-resistance help improve the efficiency and response speed of the motor control system.
3. **Inverter and power conversion equipment**: In inverters and other power conversion equipment, the FDD8426H-VB is able to handle bidirectional currents and provide stable switching performance. This makes it excel in solar inverters and other equipment that requires high current bidirectional control.
4. **Switching Mode Power Supply (SMPS)**: In a switching mode power supply, the FDD8426H-VB can be used as a bidirectional switching component to provide reliable performance in applications with high current and bidirectional current flow, especially in scenarios that require high current switching and low power consumption.
Overall, the FDD8426H-VB, with its common drain configuration, high current handling capability, and bidirectional switching characteristics, is suitable for a variety of power management and motor control applications, providing stable and efficient switching performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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