FDD7N25LZ-VB Product details
Product introduction:
FDD7N25LZ-VB is a high-voltage single N-channel MOSFET in TO252 package, designed for medium and high voltage applications. Its drain-source voltage (VDS) is as high as 250V, and the gate-source voltage (VGS) withstand voltage is ±20V, which is suitable for stable operation in a higher voltage environment. The threshold voltage (Vth) is 3.5V, ensuring reliable conduction under appropriate gate voltage. The on-resistance (RDS(ON)) of FDD7N25LZ-VB is 176mΩ when VGS is 10V. It has low conduction loss and high current carrying capacity, and the maximum continuous drain current (ID) is 17A. This MOSFET adopts trench technology, has good switching performance and thermal stability, and is widely used in medium and high voltage power electronic modules and systems.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3.5V | 17A | 176mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3.5V | 17A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3.5V | 17A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package type**: TO252
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 176mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 17A
- **Technology**: Trench
- **Input capacitance (Ciss)**: Moderate
- **Output capacitance (Coss)**: Moderate
- **Reverse recovery time (trr)**: Moderate
- **Power consumption**: Lower conduction loss and higher switching efficiency
- **Operating temperature range**: -55°C to +150°C
Domain and module applications:
FDD7N25LZ-VB MOSFET is suitable for multiple medium and high voltage power electronics fields due to its moderate high voltage characteristics and good conduction performance. The following are some typical application scenarios:
1. **Switching Power Supply (SMPS)**: FDD7N25LZ-VB can be used for high voltage switching applications in switching power supplies, such as DC-DC converters and AC-DC power modules. Its 250V drain-source voltage capability enables it to handle medium voltage level power conversion and is widely used in power management of consumer electronic devices, power tools and telecommunications equipment.
2. **Motor Drive Control**: In motor drive systems, FDD7N25LZ-VB can be used as a switching element in a motor controller, supporting efficient current switching and control, and is suitable for power tools, electric vehicles and various industrial motor drive modules.
3. **Load Switch**: Due to its low on-resistance and high current capability, the FDD7N25LZ-VB is suitable for load switch applications such as load control and power switching, ensuring stable operation under high current load conditions, and is used in home appliances, LED drivers, and industrial control systems.
4. **Power Management**: The FDD7N25LZ-VB can also be used in various power management applications, such as battery management systems (BMS) and power modules. Its medium voltage and high current characteristics enable it to effectively manage and control the battery charging and discharging process, ensuring efficient and safe operation of the battery system.
In short, the high withstand voltage and excellent switching performance of the FDD7N25LZ-VB MOSFET enable it to perform well in medium and high voltage power electronics applications, providing a reliable solution for a variety of electronic devices.
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