中文
English
FDD6N50-VB Product details
Back to previous pageProduct introduction：
Product Introduction
FDD6N50-VB is a single-channel N-type MOSFET in TO-252 package, designed for high voltage applications. This MOSFET has a drain-source voltage (VDS) of up to 650V and a gate-source voltage (VGS) tolerance of ±30V. Its threshold voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 1000mΩ at VGS of 10V, and the maximum drain current (ID) is 5A. FDD6N50-VB uses Super Junction (SJ) multi-epitaxial (Multi-EPI) technology, which provides high voltage tolerance and low power consumption. This MOSFET is designed for power switching and power conversion applications requiring high voltage and high reliability.
FDD6N50-VB is a single-channel N-type MOSFET in TO-252 package, designed for high voltage applications. This MOSFET has a drain-source voltage (VDS) of up to 650V and a gate-source voltage (VGS) tolerance of ±30V. Its threshold voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 1000mΩ at VGS of 10V, and the maximum drain current (ID) is 5A. FDD6N50-VB uses Super Junction (SJ) multi-epitaxial (Multi-EPI) technology, which provides high voltage tolerance and low power consumption. This MOSFET is designed for power switching and power conversion applications requiring high voltage and high reliability.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO-252
- **Channel configuration**: Single N-type
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ @ VGS=10V
- **Drain current (ID)**: 5A
- **Technology**: Super junction (SJ) multi-epitaxial (Multi-EPI)
- **Package type**: TO-252
- **Channel configuration**: Single N-type
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ @ VGS=10V
- **Drain current (ID)**: 5A
- **Technology**: Super junction (SJ) multi-epitaxial (Multi-EPI)
Domain and module applications：
Application fields and module examples
The high drain-source voltage and low on-resistance of FDD6N50-VB make it suitable for multiple fields and modules:
1. **High-voltage switch mode power supply (SMPS)**: In high-voltage switch mode power supply (SMPS), this MOSFET can effectively handle high input voltage and provide stable switching operation during conversion. It is suitable for high-voltage applications such as industrial power supply and communication power supply, helping to improve the efficiency and reliability of the system.
2. **Motor drive**: In applications that need to control high-voltage motors, such as motor drives in industrial equipment and home appliances, FDD6N50-VB provides high voltage tolerance and good switching performance, which can stably drive the motor, reduce power consumption and increase system reliability.
3. **High-voltage lighting system**: This MOSFET can be used in high-voltage LED drive circuits and other high-power lighting applications, such as street lighting and industrial lighting systems. In these applications, its high voltage handling capability and low on-resistance help improve the efficiency and life of the lighting system.
4. **Inverters and Power Conversion Equipment**: In solar inverters and other power conversion equipment, the FDD6N50-VB is able to handle high-voltage DC and convert it into stable AC. Its high voltage withstand capability and efficient switching function make it very suitable for these applications that require high voltage and high power density.
In general, the FDD6N50-VB is particularly suitable for high-voltage power management and switching applications with its high drain-source voltage of 650V, low on-resistance and super junction technology, providing efficient switching performance and reliability.
The high drain-source voltage and low on-resistance of FDD6N50-VB make it suitable for multiple fields and modules:
1. **High-voltage switch mode power supply (SMPS)**: In high-voltage switch mode power supply (SMPS), this MOSFET can effectively handle high input voltage and provide stable switching operation during conversion. It is suitable for high-voltage applications such as industrial power supply and communication power supply, helping to improve the efficiency and reliability of the system.
2. **Motor drive**: In applications that need to control high-voltage motors, such as motor drives in industrial equipment and home appliances, FDD6N50-VB provides high voltage tolerance and good switching performance, which can stably drive the motor, reduce power consumption and increase system reliability.
3. **High-voltage lighting system**: This MOSFET can be used in high-voltage LED drive circuits and other high-power lighting applications, such as street lighting and industrial lighting systems. In these applications, its high voltage handling capability and low on-resistance help improve the efficiency and life of the lighting system.
4. **Inverters and Power Conversion Equipment**: In solar inverters and other power conversion equipment, the FDD6N50-VB is able to handle high-voltage DC and convert it into stable AC. Its high voltage withstand capability and efficient switching function make it very suitable for these applications that require high voltage and high power density.
In general, the FDD6N50-VB is particularly suitable for high-voltage power management and switching applications with its high drain-source voltage of 650V, low on-resistance and super junction technology, providing efficient switching performance and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
