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FDD6N50-NL-VB Product details
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FDD6N50-NL-VB MOSFET Product Introduction
FDD6N50-NL-VB is a high-voltage single N-channel MOSFET in TO252 package, designed for applications requiring high withstand voltage and low conduction loss. The device has a drain-source voltage (VDS) of up to 650V and a gate-source voltage (VGS) withstand voltage of ±30V, and can operate stably in harsh electrical environments. Its threshold voltage (Vth) is 3.5V, ensuring reliable conduction at higher voltages. When VGS is 10V, the on-resistance (RDS(ON)) of the MOSFET is 1000mΩ and the maximum continuous drain current (ID) is 5A. FDD6N50-NL-VB uses Super Junction Multi-Epi (SJ_Multi-EPI) technology, which gives it excellent high-voltage switching performance and low conduction loss, making it very suitable for use in high-voltage applications.
FDD6N50-NL-VB is a high-voltage single N-channel MOSFET in TO252 package, designed for applications requiring high withstand voltage and low conduction loss. The device has a drain-source voltage (VDS) of up to 650V and a gate-source voltage (VGS) withstand voltage of ±30V, and can operate stably in harsh electrical environments. Its threshold voltage (Vth) is 3.5V, ensuring reliable conduction at higher voltages. When VGS is 10V, the on-resistance (RDS(ON)) of the MOSFET is 1000mΩ and the maximum continuous drain current (ID) is 5A. FDD6N50-NL-VB uses Super Junction Multi-Epi (SJ_Multi-EPI) technology, which gives it excellent high-voltage switching performance and low conduction loss, making it very suitable for use in high-voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
FDD6N50-NL-VB MOSFET Detailed parameter description
- **Package type**: TO252
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 5A
- **Technology**: Super junction (SJ_Multi-EPI)
- **Input capacitance (Ciss)**: Moderate
- **Output capacitance (Coss)**: Moderate
- **Reverse recovery time (trr)**: Moderate
- **Power consumption**: Low conduction loss and high switching efficiency
- **Operating temperature range**: -55°C to +150°C
- **Package type**: TO252
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 5A
- **Technology**: Super junction (SJ_Multi-EPI)
- **Input capacitance (Ciss)**: Moderate
- **Output capacitance (Coss)**: Moderate
- **Reverse recovery time (trr)**: Moderate
- **Power consumption**: Low conduction loss and high switching efficiency
- **Operating temperature range**: -55°C to +150°C
Domain and module applications：
Application fields and module examples of FDD6N50-NL-VB
FDD6N50-NL-VB MOSFET is particularly suitable for the following high-voltage fields and modules due to its high voltage carrying capacity and excellent conduction performance:
1. **Switching Power Supply (SMPS)**: In switching power supply applications, FDD6N50-NL-VB can be used as the main power switching device. Its high withstand voltage characteristic of 650V makes it very suitable for use in AC-DC converters and other power supply designs that require high-voltage switches, such as industrial power supplies, TV power supplies, and telecommunications equipment power supplies.
2. **LED Lighting Driver**: FDD6N50-NL-VB is also suitable for use in LED lighting drivers, especially in scenarios that require high-voltage input, such as street lighting, industrial lighting, and commercial lighting systems. Its high-voltage capability and low loss help improve system efficiency and reliability.
3. **Inductive heater**: In inductive heating applications, the high withstand voltage and stable current control capability of the FDD6N50-NL-VB enable it to cope with the voltage spikes and high current demands caused by inductive loads, ensuring the stability and efficient operation of the heating system.
4. **Inverters and frequency converters**: In photovoltaic inverters and motor frequency converters, the FDD6N50-NL-VB can effectively manage the conversion and regulation of high-voltage currents due to its high-voltage characteristics, and is suitable for solar systems, electric vehicle drive systems, and industrial motor control modules.
Overall, the FDD6N50-NL-VB MOSFET provides excellent performance and reliability in high-voltage applications by combining high withstand voltage and advanced super junction technology, making it an ideal choice for high-efficiency power electronics designs.
FDD6N50-NL-VB MOSFET is particularly suitable for the following high-voltage fields and modules due to its high voltage carrying capacity and excellent conduction performance:
1. **Switching Power Supply (SMPS)**: In switching power supply applications, FDD6N50-NL-VB can be used as the main power switching device. Its high withstand voltage characteristic of 650V makes it very suitable for use in AC-DC converters and other power supply designs that require high-voltage switches, such as industrial power supplies, TV power supplies, and telecommunications equipment power supplies.
2. **LED Lighting Driver**: FDD6N50-NL-VB is also suitable for use in LED lighting drivers, especially in scenarios that require high-voltage input, such as street lighting, industrial lighting, and commercial lighting systems. Its high-voltage capability and low loss help improve system efficiency and reliability.
3. **Inductive heater**: In inductive heating applications, the high withstand voltage and stable current control capability of the FDD6N50-NL-VB enable it to cope with the voltage spikes and high current demands caused by inductive loads, ensuring the stability and efficient operation of the heating system.
4. **Inverters and frequency converters**: In photovoltaic inverters and motor frequency converters, the FDD6N50-NL-VB can effectively manage the conversion and regulation of high-voltage currents due to its high-voltage characteristics, and is suitable for solar systems, electric vehicle drive systems, and industrial motor control modules.
Overall, the FDD6N50-NL-VB MOSFET provides excellent performance and reliability in high-voltage applications by combining high withstand voltage and advanced super junction technology, making it an ideal choice for high-efficiency power electronics designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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