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FDD6N50F-VB Product details

Product introduction:

Product Introduction

**FDD6N50F-VB** is a single-channel N-type MOSFET in a TO-252 package, designed for high-voltage, high-reliability power conversion and switching applications. The device has a drain-source voltage (VDS) of up to 650V and a gate-source voltage (VGS) of ±30V, and uses advanced Super-Junction (SJ) and Multi-EPI (Multi-EPI) technologies. These features give the FDD6N50F-VB excellent performance in high-voltage applications and are suitable for scenarios that require high-voltage control and efficient power conversion.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 650V 3.5V 5A 1000mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 650V 3.5V 5A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 650V 3.5V 5A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
Detailed parameter description

- **Package type (Package): ** TO-252
- **Configuration (Configuration): ** Single channel N-type MOSFET
- **Drain-source voltage (VDS): ** 650V
- **Gate-source voltage (VGS): ** ±30V
- **Turning voltage threshold (Vth): ** 3.5V
- **On-resistance (RDS(ON)): ** 1000mΩ @ VGS = 10V
- **Continuous drain current (ID): ** 5A
- **Technology (Technology): ** Super junction (SJ) and multi-epitaxial (Multi-EPI)

Domain and module applications:

Applications and Module Examples

**FDD6N50F-VB** MOSFET's high voltage capability and advanced technical features make it very suitable for high voltage power conversion and switching applications. Here are some typical application areas and module examples:

1. **Switch Mode Power Supply (SMPS):** FDD6N50F-VB is commonly used for high voltage switching on the primary side of switch mode power supplies. These power supplies are widely used in computers, telecommunications equipment and home appliances. The drain-source voltage of up to 650V enables it to handle high input voltages, ensuring the stability and efficiency of the power supply.

2. **Power Inverter:** This MOSFET is suitable for use in power inverters in industrial and residential solar systems to help convert DC power to AC power. Its high voltage and high durability ensure reliable operation of the inverter under various environmental conditions.

3. **Motor Control:** In industrial automation, FDD6N50F-VB can be used to drive high voltage motors or control the switching operation of motors. Its high voltage capability ensures stability and efficiency when handling high-power motors.

4. **Lighting:** Particularly suitable for power conversion modules in high-voltage LED lighting systems, used to drive the high-voltage drive circuits of LED lamps, providing reliable voltage regulation and control.

FDD6N50F-VB combines its high voltage characteristics with low conduction losses, making it very suitable for use in these applications that require high-voltage operation and efficient power conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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