FDD6N50FTM-VB Product details
Product introduction:
FDD6N50FTM-VB is an N-channel power MOSFET, packaged in TO252, and manufactured using Super Junction (SJ) Multi-EPI technology. Designed for high voltage applications, the device features a drain-source voltage of 650V and a gate-source voltage of 30V, making it suitable for applications requiring high voltage tolerance. Its high threshold voltage and 1000mΩ on-resistance ensure stable operation under high voltage and medium current conditions, making it an ideal choice for high-efficiency switching applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 1000mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 5A
- **Technology type**: SJ (Super Junction) Multi-EPI
Domain and module applications:
FDD6N50FTM-VB is suitable for a variety of application scenarios that require high voltage tolerance. The following are some typical application fields and modules:
1. **Switching Power Supplies**:
- FDD6N50FTM-VB is very suitable for use in switching power supplies, especially in applications that require high voltage operation, such as LED driver power supplies, desktop computer power supplies, and industrial power supplies. The high voltage and low loss characteristics of this MOSFET ensure efficient power conversion.
2. **Battery Management Systems**:
- In battery management systems, FDD6N50FTM-VB can be used to manage the charging and discharging process of high-voltage battery packs, especially for electric vehicles and large energy storage systems. Its high voltage tolerance ensures safe operation under high voltage conditions.
3. **Photovoltaic Inverters**:
- This device excels in photovoltaic inverters and is capable of handling high-voltage conversion tasks in solar photovoltaic systems. Its Super Junction structure provides low conduction losses and high efficiency, making it more efficient in the energy conversion process.
4. **Induction Heating**:
- In induction heating equipment, the FDD6N50FTM-VB can be used as a high-frequency switching element to help effectively control the power output of the heating process. Its high voltage and stable performance ensure system reliability.
5. **High-Voltage Inverters**:
- In inverters that require high voltage and high efficiency, such as industrial motor drives and wind power inverters, the FDD6N50FTM-VB can be used as a key switching element to provide reliable current conduction and low-loss operation.
FDD6N50FTM-VB has become the preferred device for high-efficiency power conversion and high-voltage control applications due to its high voltage of 650V, low on-resistance and stable high-voltage performance.
Technical support:
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