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FDD6N50FTF-VB Product details
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FDD6N50FTF-VB MOSFET Product Introduction
The FDD6N50FTF-VB is a high-voltage N-Channel MOSFET designed for applications that require high voltage resistance and reliability. It adopts TO252 package and utilizes SJ_Multi-EPI technology to provide superior performance and voltage resistance. The drain-source voltage (VDS) of this MOSFET is as high as 650V, and it can operate stably in a higher voltage environment. Its continuous leakage current (ID) is 5A, which is suitable for power management systems that require high voltage and medium current handling. The FDD6N50FTF-VB has a relatively high on-resistance (RDS(ON)), but its high voltage resistance and applicable working environment enable it to perform well in specific applications.
The FDD6N50FTF-VB is a high-voltage N-Channel MOSFET designed for applications that require high voltage resistance and reliability. It adopts TO252 package and utilizes SJ_Multi-EPI technology to provide superior performance and voltage resistance. The drain-source voltage (VDS) of this MOSFET is as high as 650V, and it can operate stably in a higher voltage environment. Its continuous leakage current (ID) is 5A, which is suitable for power management systems that require high voltage and medium current handling. The FDD6N50FTF-VB has a relatively high on-resistance (RDS(ON)), but its high voltage resistance and applicable working environment enable it to perform well in specific applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package: ** TO252
- **Configuration: ** Single N-Channel
- **Drain-Source Voltage (VDS): ** 650V
- **Gate-Source Voltage (VGS): ** ±30V
- **Threshold Voltage (Vth): ** 3.5V
- **On-Resistance (RDS(ON)): **
- 1000mΩ @ VGS = 10V
- **Continuous Drain Current (ID): ** 5A
- **Technology: ** SJ_Multi-EPI
- **Package: ** TO252
- **Configuration: ** Single N-Channel
- **Drain-Source Voltage (VDS): ** 650V
- **Gate-Source Voltage (VGS): ** ±30V
- **Threshold Voltage (Vth): ** 3.5V
- **On-Resistance (RDS(ON)): **
- 1000mΩ @ VGS = 10V
- **Continuous Drain Current (ID): ** 5A
- **Technology: ** SJ_Multi-EPI
Domain and module applications：
Application fields and module examples
1. **High-voltage power converters:** The FDD6N50FTF-VB is ideal for use in high-voltage power converters, such as those used in industrial equipment and power supply systems. Its high withstand voltage characteristics enable it to operate stably in high-voltage environments, ensuring the safety and reliability of power systems.
2. **Electrical isolation switches:** In electrical isolation switches and protection circuits, this MOSFET can be used to handle high-voltage switching operations, providing effective electrical isolation and overvoltage protection. Suitable for equipment that requires high-voltage switching and protection, such as motor control systems and power switch modules.
3. **Home appliances and consumer electronics:** In home appliances and consumer electronics, the FDD6N50FTF-VB can be used in power management modules for high-voltage applications, such as high-voltage DC power management. Although its on-resistance is high, its high withstand voltage characteristics enable it to provide stable performance in high-voltage environments.
4. **Power Inverter:** In power inverter applications, such as solar inverters or UPS systems, the FDD6N50FTF-VB can handle high voltage conversion and provide reliable switching functions. Its high withstand voltage capability and reliability are suitable for use in these applications that require high voltage operation.
The FDD6N50FTF-VB's high withstand voltage capability, medium current handling capability, and reliable SJ_Multi-EPI technology make it an ideal choice for high voltage applications, especially in systems that require withstand voltage and stability.
1. **High-voltage power converters:** The FDD6N50FTF-VB is ideal for use in high-voltage power converters, such as those used in industrial equipment and power supply systems. Its high withstand voltage characteristics enable it to operate stably in high-voltage environments, ensuring the safety and reliability of power systems.
2. **Electrical isolation switches:** In electrical isolation switches and protection circuits, this MOSFET can be used to handle high-voltage switching operations, providing effective electrical isolation and overvoltage protection. Suitable for equipment that requires high-voltage switching and protection, such as motor control systems and power switch modules.
3. **Home appliances and consumer electronics:** In home appliances and consumer electronics, the FDD6N50FTF-VB can be used in power management modules for high-voltage applications, such as high-voltage DC power management. Although its on-resistance is high, its high withstand voltage characteristics enable it to provide stable performance in high-voltage environments.
4. **Power Inverter:** In power inverter applications, such as solar inverters or UPS systems, the FDD6N50FTF-VB can handle high voltage conversion and provide reliable switching functions. Its high withstand voltage capability and reliability are suitable for use in these applications that require high voltage operation.
The FDD6N50FTF-VB's high withstand voltage capability, medium current handling capability, and reliable SJ_Multi-EPI technology make it an ideal choice for high voltage applications, especially in systems that require withstand voltage and stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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