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FDD6N25-VB Product details
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1. FDD6N25-VB Product Introduction
FDD6N25-VB is a single N-channel MOSFET in TO-252 package. The device adopts advanced Trench technology and is designed to handle higher voltage and current applications. FDD6N25-VB provides a higher drain-source voltage (VDS) and moderate on-resistance, allowing it to maintain reliable performance in high voltage and high current environments. Its 3V threshold voltage and 640mΩ on-resistance make it suitable for various electronic circuits and systems that require higher voltage and medium current.
FDD6N25-VB is a single N-channel MOSFET in TO-252 package. The device adopts advanced Trench technology and is designed to handle higher voltage and current applications. FDD6N25-VB provides a higher drain-source voltage (VDS) and moderate on-resistance, allowing it to maintain reliable performance in high voltage and high current environments. Its 3V threshold voltage and 640mΩ on-resistance make it suitable for various electronic circuits and systems that require higher voltage and medium current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3V | 4.5A | 640mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3V | 4.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3V | 4.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. FDD6N25-VB Detailed parameter description
- **Package type**: TO-252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 640mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 4.5A
- **Technology**: Trench
- **Package type**: TO-252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 640mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 4.5A
- **Technology**: Trench
Domain and module applications：
3. FDD6N25-VB Application Fields and Modules
The high voltage handling capability and stable performance of FDD6N25-VB make it suitable for a variety of electronic fields and modules:
1. **Power Management**: In high voltage power management modules, FDD6N25-VB can be used for high voltage DC-DC converters, inverters and switching power supplies. Its higher drain-source voltage (250V) makes it suitable for handling high voltage inputs, while its on-resistance (640mΩ) provides reliable switching performance while maintaining reasonable power consumption.
2. **High Voltage Switching Circuit**: Due to its higher drain-source voltage capability, FDD6N25-VB is suitable for high voltage switching circuits, such as high voltage load switches and protection circuits. This MOSFET is able to handle high voltage loads and maintain stable switching performance in high voltage environments.
3. **Power Conversion**: In power conversion applications such as power factor correction (PFC) circuits and high-voltage power converters, the FDD6N25-VB provides high voltage and moderate current handling capabilities. Its low on-resistance (640mΩ) ensures improved conversion efficiency while reducing system energy losses.
4. **Home Appliances and Industrial Equipment**: The device is also suitable for use in home appliances (such as microwave ovens, washing machines) and industrial equipment, which often require the ability to withstand high voltages and moderate currents. The high voltage capability and stable performance of the FDD6N25-VB enable it to perform well in these devices.
The FDD6N25-VB is a high-voltage N-channel MOSFET suitable for applications that need to handle higher voltages, providing reliable performance and efficient current handling capabilities.
The high voltage handling capability and stable performance of FDD6N25-VB make it suitable for a variety of electronic fields and modules:
1. **Power Management**: In high voltage power management modules, FDD6N25-VB can be used for high voltage DC-DC converters, inverters and switching power supplies. Its higher drain-source voltage (250V) makes it suitable for handling high voltage inputs, while its on-resistance (640mΩ) provides reliable switching performance while maintaining reasonable power consumption.
2. **High Voltage Switching Circuit**: Due to its higher drain-source voltage capability, FDD6N25-VB is suitable for high voltage switching circuits, such as high voltage load switches and protection circuits. This MOSFET is able to handle high voltage loads and maintain stable switching performance in high voltage environments.
3. **Power Conversion**: In power conversion applications such as power factor correction (PFC) circuits and high-voltage power converters, the FDD6N25-VB provides high voltage and moderate current handling capabilities. Its low on-resistance (640mΩ) ensures improved conversion efficiency while reducing system energy losses.
4. **Home Appliances and Industrial Equipment**: The device is also suitable for use in home appliances (such as microwave ovens, washing machines) and industrial equipment, which often require the ability to withstand high voltages and moderate currents. The high voltage capability and stable performance of the FDD6N25-VB enable it to perform well in these devices.
The FDD6N25-VB is a high-voltage N-channel MOSFET suitable for applications that need to handle higher voltages, providing reliable performance and efficient current handling capabilities.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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