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FDD6N25TM-VB Product details
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Product Introduction
FDD6N25TM-VB is an N-channel MOSFET that uses advanced Trench technology and is packaged in TO252. The device is designed for high-voltage applications and can provide stable performance under higher voltage conditions. Its high withstand voltage and moderate on-resistance make it suitable for a variety of scenarios that require efficient energy conversion and power management. FDD6N25TM-VB is suitable for use in harsh working environments and ensures reliability under these conditions.
FDD6N25TM-VB is an N-channel MOSFET that uses advanced Trench technology and is packaged in TO252. The device is designed for high-voltage applications and can provide stable performance under higher voltage conditions. Its high withstand voltage and moderate on-resistance make it suitable for a variety of scenarios that require efficient energy conversion and power management. FDD6N25TM-VB is suitable for use in harsh working environments and ensures reliability under these conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3V | 4.5A | 640mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3V | 4.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3V | 4.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: FDD6N25TM-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 640mΩ @ VGS = 10V
- **Drain current (ID)**: 4.5A
- **Technology**: Trench
- **Model**: FDD6N25TM-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 640mΩ @ VGS = 10V
- **Drain current (ID)**: 4.5A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
FDD6N25TM-VB MOSFET has important applications in many fields and modules due to its high withstand voltage and moderate on-resistance. The following are some specific application scenarios:
1. **Industrial power supply**: In industrial power supply systems, FDD6N25TM-VB can be used in high-voltage conversion and regulation circuits, such as high-voltage DC-DC converters, to provide stable current control and efficient power conversion, especially suitable for scenarios requiring higher voltage tolerance.
2. **LED driver**: This MOSFET is suitable for power switches and current regulation modules in LED drivers, which can ensure the stability and reliability of LED lamps at higher operating voltages, especially in outdoor and industrial lighting.
3. **Automotive electronics**: In automotive electronic systems, FDD6N25TM-VB is suitable for on-board high-voltage power control modules, such as electronic ignition systems and battery management systems, to provide stable working performance under high voltage conditions.
4. **Solar Inverter**: In solar power generation systems, this MOSFET is suitable for high-voltage switches in inverter circuits, supporting efficient energy conversion and transmission, and ensuring the overall efficiency and stability of the system.
In general, the FDD6N25TM-VB is a MOSFET designed for high-voltage applications, which can achieve efficient and stable power management and control in multiple fields, meeting the needs of various industrial and automotive applications.
FDD6N25TM-VB MOSFET has important applications in many fields and modules due to its high withstand voltage and moderate on-resistance. The following are some specific application scenarios:
1. **Industrial power supply**: In industrial power supply systems, FDD6N25TM-VB can be used in high-voltage conversion and regulation circuits, such as high-voltage DC-DC converters, to provide stable current control and efficient power conversion, especially suitable for scenarios requiring higher voltage tolerance.
2. **LED driver**: This MOSFET is suitable for power switches and current regulation modules in LED drivers, which can ensure the stability and reliability of LED lamps at higher operating voltages, especially in outdoor and industrial lighting.
3. **Automotive electronics**: In automotive electronic systems, FDD6N25TM-VB is suitable for on-board high-voltage power control modules, such as electronic ignition systems and battery management systems, to provide stable working performance under high voltage conditions.
4. **Solar Inverter**: In solar power generation systems, this MOSFET is suitable for high-voltage switches in inverter circuits, supporting efficient energy conversion and transmission, and ensuring the overall efficiency and stability of the system.
In general, the FDD6N25TM-VB is a MOSFET designed for high-voltage applications, which can achieve efficient and stable power management and control in multiple fields, meeting the needs of various industrial and automotive applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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