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FDD6N20TF-VB Product details
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Product Introduction
The FDD6N20TF-VB is a single-channel N-type MOSFET in a TO-252 package designed for medium and high voltage applications. Its drain-source voltage (VDS) is 200V, the gate-source voltage (VGS) range is ±20V, and the threshold voltage (Vth) is 3V. The FDD6N20TF-VB uses advanced trench technology, and its on-resistance (RDS(ON)) remains at 850mΩ (at VGS of 10V) despite its higher drain-source voltage. With a maximum drain current (ID) of 5A, the device is suitable for scenarios that require higher voltage handling capabilities, especially in power conversion and switching applications.
The FDD6N20TF-VB is a single-channel N-type MOSFET in a TO-252 package designed for medium and high voltage applications. Its drain-source voltage (VDS) is 200V, the gate-source voltage (VGS) range is ±20V, and the threshold voltage (Vth) is 3V. The FDD6N20TF-VB uses advanced trench technology, and its on-resistance (RDS(ON)) remains at 850mΩ (at VGS of 10V) despite its higher drain-source voltage. With a maximum drain current (ID) of 5A, the device is suitable for scenarios that require higher voltage handling capabilities, especially in power conversion and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 5A | 850mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO-252
- **Channel configuration**: Single N type
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 850mΩ @ VGS=10V
- **Drain current (ID)**: 5A
- **Technology**: Trench
- **Package type**: TO-252
- **Channel configuration**: Single N type
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 850mΩ @ VGS=10V
- **Drain current (ID)**: 5A
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
The FDD6N20TF-VB is well suited for the following applications due to its high drain-source voltage and medium on-resistance:
1. **Power Adapters and Converters**: In power adapters and AC-DC and DC-DC converters, this MOSFET can be used as the main switching element, capable of withstanding higher input voltages and providing reliable switching during the conversion process. It helps improve the efficiency and reliability of power conversion in these applications.
2. **High-voltage Motor Control**: In applications that require control of high-voltage motors, such as motor drives in industrial equipment or home appliances, the FDD6N20TF-VB provides the necessary voltage handling capability to ensure stable operation under high-voltage environments and reduce energy losses through low on-resistance.
3. **Lighting Control Module**: This MOSFET is suitable for high-voltage LED drive circuits and other lighting control modules, capable of effectively controlling current and providing stable lighting output while maintaining low power consumption under high voltage conditions.
4. **Power protection circuit**: In the power protection module, FDD6N20TF-VB can be used as an overvoltage protection element to prevent excessive voltage from damaging downstream circuits, thereby improving the safety and reliability of the system.
Overall, FDD6N20TF-VB, with its 200V drain-source voltage and low on-resistance, is particularly suitable for application scenarios that require high voltage processing and precise control, showing excellent performance and reliability.
The FDD6N20TF-VB is well suited for the following applications due to its high drain-source voltage and medium on-resistance:
1. **Power Adapters and Converters**: In power adapters and AC-DC and DC-DC converters, this MOSFET can be used as the main switching element, capable of withstanding higher input voltages and providing reliable switching during the conversion process. It helps improve the efficiency and reliability of power conversion in these applications.
2. **High-voltage Motor Control**: In applications that require control of high-voltage motors, such as motor drives in industrial equipment or home appliances, the FDD6N20TF-VB provides the necessary voltage handling capability to ensure stable operation under high-voltage environments and reduce energy losses through low on-resistance.
3. **Lighting Control Module**: This MOSFET is suitable for high-voltage LED drive circuits and other lighting control modules, capable of effectively controlling current and providing stable lighting output while maintaining low power consumption under high voltage conditions.
4. **Power protection circuit**: In the power protection module, FDD6N20TF-VB can be used as an overvoltage protection element to prevent excessive voltage from damaging downstream circuits, thereby improving the safety and reliability of the system.
Overall, FDD6N20TF-VB, with its 200V drain-source voltage and low on-resistance, is particularly suitable for application scenarios that require high voltage processing and precise control, showing excellent performance and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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