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FDD6690A-VB Product details
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Product Introduction
The FDD6690A-VB is a single-channel N-type MOSFET in a TO-252 package, designed for high-performance power switching applications. Its drain-source voltage (VDS) is 30V, the gate-source voltage (VGS) range is ±20V, and the threshold voltage (Vth) is 1.7V. This MOSFET uses advanced trench technology to provide extremely low on-resistance (RDS(ON)), which is 5mΩ at a VGS of 10V and 6mΩ at a VGS of 4.5V. These features enable the FDD6690A-VB to support drain currents (ID) of up to 80A, and excel in power management applications that require high switching efficiency and low power consumption.
The FDD6690A-VB is a single-channel N-type MOSFET in a TO-252 package, designed for high-performance power switching applications. Its drain-source voltage (VDS) is 30V, the gate-source voltage (VGS) range is ±20V, and the threshold voltage (Vth) is 1.7V. This MOSFET uses advanced trench technology to provide extremely low on-resistance (RDS(ON)), which is 5mΩ at a VGS of 10V and 6mΩ at a VGS of 4.5V. These features enable the FDD6690A-VB to support drain currents (ID) of up to 80A, and excel in power management applications that require high switching efficiency and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO-252
- **Channel configuration**: Single N type
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Drain current (ID)**: 80A
- **Technology**: Trench
- **Package type**: TO-252
- **Channel configuration**: Single N type
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Drain current (ID)**: 80A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
The characteristics of the FDD6690A-VB make it very suitable for the following application areas:
1. **High-efficiency DC-DC converter**: In DC-DC converters, the low on-resistance of the FDD6690A-VB can significantly improve conversion efficiency and reduce power loss. It can effectively reduce power consumption in the switching link of the converter, especially in applications requiring high current handling capabilities.
2. **Motor drive circuit**: The high current capability and low on-resistance of this MOSFET make it very suitable for use in motor drives, such as motor control modules in industrial automation systems. This can effectively improve the performance of the motor drive system and reduce the heat generation of the system.
3. **Power management module**: In power management applications, such as power distribution and protection circuits, the FDD6690A-VB can be used as an efficient switching element to provide stable current control and overcurrent protection functions.
4. **Battery protection circuit**: In the lithium battery protection circuit, FDD6690A-VB can effectively control the battery charging and discharging process, prevent overcurrent and overheating, and thus improve the safety and service life of the battery.
In general, FDD6690A-VB provides excellent performance for various high-efficiency power conversion and switching applications with its low RDS(ON) and high current capability, and is suitable for application scenarios requiring high performance and low power consumption.
The characteristics of the FDD6690A-VB make it very suitable for the following application areas:
1. **High-efficiency DC-DC converter**: In DC-DC converters, the low on-resistance of the FDD6690A-VB can significantly improve conversion efficiency and reduce power loss. It can effectively reduce power consumption in the switching link of the converter, especially in applications requiring high current handling capabilities.
2. **Motor drive circuit**: The high current capability and low on-resistance of this MOSFET make it very suitable for use in motor drives, such as motor control modules in industrial automation systems. This can effectively improve the performance of the motor drive system and reduce the heat generation of the system.
3. **Power management module**: In power management applications, such as power distribution and protection circuits, the FDD6690A-VB can be used as an efficient switching element to provide stable current control and overcurrent protection functions.
4. **Battery protection circuit**: In the lithium battery protection circuit, FDD6690A-VB can effectively control the battery charging and discharging process, prevent overcurrent and overheating, and thus improve the safety and service life of the battery.
In general, FDD6690A-VB provides excellent performance for various high-efficiency power conversion and switching applications with its low RDS(ON) and high current capability, and is suitable for application scenarios requiring high performance and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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