FDD6688S-NL-VB Product details
Product introduction:
FDD6688S-NL-VB is a high-performance single N-channel MOSFET in TO252 package, designed for high current and low switching loss applications. The drain-source voltage (VDS) of this MOSFET is 30V, and the gate-source voltage (VGS) withstand voltage is ±20V. Its threshold voltage (Vth) is 1.7V, ensuring effective conduction at low gate voltage. The on-resistance (RDS(ON)) of FDD6688S-NL-VB is 3mΩ at a gate voltage of 4.5V, and is even lower at 2mΩ at a gate voltage of 10V. It has excellent low conduction loss performance and high current carrying capacity (ID up to 100A). The use of trench technology gives it excellent switching performance and thermal stability, making it very suitable for high-efficiency power conversion applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package type**: TO252
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 100A
- **Technology**: Trench
- **Input capacitance (Ciss)**: Low
- **Output capacitance (Coss)**: Low
- **Reverse recovery time (trr)**: Short
- **Power dissipation**: Low conduction and switching losses
- **Operating temperature range**: -55°C to +175°C
Domain and module applications:
FDD6688S-NL-VB MOSFET is suitable for a variety of high-performance power electronic modules and systems due to its excellent low on-resistance and high current capability. Here are several specific application fields:
1. **High-efficiency DC-DC converter**: In DC-DC converters that require high efficiency and low power consumption, FDD6688S-NL-VB can provide stable current and low energy loss. Its low RDS(ON) ensures efficient conversion under high current conditions and is widely used in computer power modules, communication equipment and electric vehicle chargers.
2. **Electric vehicle and industrial motor drive**: In electric vehicle and industrial motor control systems, FDD6688S-NL-VB can be used to drive high-power motors, provide reliable current control and fast switching, and improve the operating efficiency of the motor and the overall performance of the system.
3. **Load switch**: Due to its high current carrying capacity and low switching loss, the FDD6688S-NL-VB is suitable for various load switch applications, including LED drivers, smart power switches, etc.
4. **Uninterruptible power supply (UPS)**: In UPS systems, the FDD6688S-NL-VB can achieve fast power switching and efficient energy management to ensure system reliability and stability during power outages.
Overall, the FDD6688S-NL-VB MOSFET is an ideal choice for high efficiency and high reliability in the field of power electronics, and can provide excellent performance in application scenarios requiring high current and low power consumption.
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