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FDD6680A-NL-VB Product details
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FDD6680A-NL-VB MOSFET Product Introduction
The FDD6680A-NL-VB is a high-performance N-Channel MOSFET designed for applications that require high current handling and efficient energy management. It uses a TO252 package and is suitable for use in environments with strict space and thermal requirements. With a maximum drain-source voltage (VDS) of 30V and a continuous drain current (ID) of up to 70A, this MOSFET is ideal for demanding power and switching applications. It uses trench technology to reduce on-resistance and improve efficiency, thereby optimizing overall performance.
The FDD6680A-NL-VB is a high-performance N-Channel MOSFET designed for applications that require high current handling and efficient energy management. It uses a TO252 package and is suitable for use in environments with strict space and thermal requirements. With a maximum drain-source voltage (VDS) of 30V and a continuous drain current (ID) of up to 70A, this MOSFET is ideal for demanding power and switching applications. It uses trench technology to reduce on-resistance and improve efficiency, thereby optimizing overall performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package: ** TO252
- **Configuration: ** Single N-Channel
- **Drain-source voltage (VDS): ** 30V
- **Gate-source voltage (VGS): ** ±20V
- **Threshold voltage (Vth): ** 1.7V
- **On-resistance (RDS(ON)): **
- 9mΩ @ VGS = 4.5V
- 7mΩ @ VGS = 10V
- **Continuous leakage current (ID): ** 70A
- **Technology: ** Trench technology
- **Package: ** TO252
- **Configuration: ** Single N-Channel
- **Drain-source voltage (VDS): ** 30V
- **Gate-source voltage (VGS): ** ±20V
- **Threshold voltage (Vth): ** 1.7V
- **On-resistance (RDS(ON)): **
- 9mΩ @ VGS = 4.5V
- 7mΩ @ VGS = 10V
- **Continuous leakage current (ID): ** 70A
- **Technology: ** Trench technology
Domain and module applications：
Applications and module examples
1. **Power management systems:** The FDD6680A-NL-VB is ideal for use in power management systems, especially where high efficiency is required. Its low RDS(ON) minimizes power losses, making it an ideal choice for power supply units (PSUs) in consumer electronics and industrial applications, helping to improve energy efficiency and reduce heat generation.
2. **Motor drivers:** In motor drive circuits, especially in robotics or electric vehicle applications, the FDD6680A-NL-VB provides reliable performance with high current capacity and low on-resistance. This ensures efficient power delivery to the motor, improving control and performance.
3. **DC-DC converters:** This MOSFET is suitable for DC-DC converters in a variety of electronic devices, including communications equipment and computing systems. Its low on-resistance makes voltage conversion more efficient, reducing power losses, thereby improving overall converter efficiency.
4. **Battery Management System (BMS):** For battery management systems in electric vehicles or portable devices, the FDD6680A-NL-VB provides excellent performance for managing high current charge and discharge cycles. Its ability to handle high current and low voltage drop ensures reliable and efficient operation of the battery system.
The low on-resistance, high current capability and efficient trench technology of the FDD6680A-NL-VB make it a versatile and efficient choice in a wide range of power management and switching applications.
1. **Power management systems:** The FDD6680A-NL-VB is ideal for use in power management systems, especially where high efficiency is required. Its low RDS(ON) minimizes power losses, making it an ideal choice for power supply units (PSUs) in consumer electronics and industrial applications, helping to improve energy efficiency and reduce heat generation.
2. **Motor drivers:** In motor drive circuits, especially in robotics or electric vehicle applications, the FDD6680A-NL-VB provides reliable performance with high current capacity and low on-resistance. This ensures efficient power delivery to the motor, improving control and performance.
3. **DC-DC converters:** This MOSFET is suitable for DC-DC converters in a variety of electronic devices, including communications equipment and computing systems. Its low on-resistance makes voltage conversion more efficient, reducing power losses, thereby improving overall converter efficiency.
4. **Battery Management System (BMS):** For battery management systems in electric vehicles or portable devices, the FDD6680A-NL-VB provides excellent performance for managing high current charge and discharge cycles. Its ability to handle high current and low voltage drop ensures reliable and efficient operation of the battery system.
The low on-resistance, high current capability and efficient trench technology of the FDD6680A-NL-VB make it a versatile and efficient choice in a wide range of power management and switching applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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