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FDD6670-VB Product details
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Product Introduction
FDD6670-VB is a single N-channel MOSFET in TO-252 package. It has excellent on-resistance and high current capability, suitable for applications requiring high efficiency and low power consumption. Using Trench technology, this MOSFET excels in performance and reliability, especially for power management and load switching applications.
FDD6670-VB is a single N-channel MOSFET in TO-252 package. It has excellent on-resistance and high current capability, suitable for applications requiring high efficiency and low power consumption. Using Trench technology, this MOSFET excels in performance and reliability, especially for power management and load switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO-252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Drain current (ID)**: 80A
- **Technology type**: Trench
- **Package type**: TO-252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Drain current (ID)**: 80A
- **Technology type**: Trench
Domain and module applications：
Applicable fields and modules
1. **Power management**: The FDD6670-VB is suitable for high-efficiency power management modules in DC-DC converters. In these applications, low on-resistance ensures efficient energy transfer, reduces heat loss, and improves the overall efficiency of the system.
2. **Load switch**: In the fields of automotive electronics and industrial control, this MOSFET is used as a load switch to control the connection and disconnection of high-current loads. Its high current capability and low RDS(ON) enable it to reduce heat and increase switching speed in these applications.
3. **Motor drive**: The FDD6670-VB is also suitable for power tools and small motor drive modules. Its low on-resistance and high current capability ensure the stability and efficiency of motor operation while reducing power consumption in the drive circuit.
1. **Power management**: The FDD6670-VB is suitable for high-efficiency power management modules in DC-DC converters. In these applications, low on-resistance ensures efficient energy transfer, reduces heat loss, and improves the overall efficiency of the system.
2. **Load switch**: In the fields of automotive electronics and industrial control, this MOSFET is used as a load switch to control the connection and disconnection of high-current loads. Its high current capability and low RDS(ON) enable it to reduce heat and increase switching speed in these applications.
3. **Motor drive**: The FDD6670-VB is also suitable for power tools and small motor drive modules. Its low on-resistance and high current capability ensure the stability and efficiency of motor operation while reducing power consumption in the drive circuit.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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