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FDD6670S-VB Product details
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Product Introduction: FDD6670S-VB
FDD6670S-VB is a high-performance N-channel MOSFET in TO252 package. It has low on-resistance and high current handling capability, and is particularly suitable for applications requiring high efficiency and low loss. The device uses advanced Trench technology to provide excellent performance at lower gate drive voltages, making it an ideal choice for power management and high-frequency conversion applications.
FDD6670S-VB is a high-performance N-channel MOSFET in TO252 package. It has low on-resistance and high current handling capability, and is particularly suitable for applications requiring high efficiency and low loss. The device uses advanced Trench technology to provide excellent performance at lower gate drive voltages, making it an ideal choice for power management and high-frequency conversion applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description:
- **Model**: FDD6670S-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Continuous drain current (ID)**: 80A
- **Technology**: Trench
- **Model**: FDD6670S-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Continuous drain current (ID)**: 80A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples:
1. **Automotive electronics**: The FDD6670S-VB is particularly suitable for DC-DC converters and electric power steering systems in automotive electronics. Its low on-resistance and high current handling capability can effectively reduce power consumption and heat accumulation, thereby improving system efficiency and reliability.
2. **Power management**: This MOSFET is commonly used in switching power supplies, load switches, and low-voltage and high-current power rail applications. Its fast switching characteristics make it excel in high-frequency operating environments and is suitable for high-efficiency regulators and synchronous rectifiers.
3. **Industrial control**: In industrial automation systems, the FDD6670S-VB can be used to drive motors or control large loads. Its high current capability and durable packaging make it suitable for industrial environments that require high reliability and durability.
The FDD6670S-VB is a MOSFET with excellent comprehensive performance that can meet the needs of a variety of demanding applications, providing design engineers with a wide range of application possibilities.
1. **Automotive electronics**: The FDD6670S-VB is particularly suitable for DC-DC converters and electric power steering systems in automotive electronics. Its low on-resistance and high current handling capability can effectively reduce power consumption and heat accumulation, thereby improving system efficiency and reliability.
2. **Power management**: This MOSFET is commonly used in switching power supplies, load switches, and low-voltage and high-current power rail applications. Its fast switching characteristics make it excel in high-frequency operating environments and is suitable for high-efficiency regulators and synchronous rectifiers.
3. **Industrial control**: In industrial automation systems, the FDD6670S-VB can be used to drive motors or control large loads. Its high current capability and durable packaging make it suitable for industrial environments that require high reliability and durability.
The FDD6670S-VB is a MOSFET with excellent comprehensive performance that can meet the needs of a variety of demanding applications, providing design engineers with a wide range of application possibilities.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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