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FDD6630A-VB Product details
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FDD6630A-VB MOSFET Product Introduction
The FDD6630A-VB is a high-performance single N-channel power MOSFET in a TO252 package, designed for high current and high efficiency applications. The MOSFET can withstand a drain-source voltage (VDS) of up to 30V, has a gate-source voltage (VGS) of ±20V, and is effectively turned on at a threshold voltage (Vth) of 1.7V. Manufactured using advanced Trench technology, the FDD6630A-VB exhibits extremely low on-resistance (RDS(ON)) of 9mΩ at a 4.5V gate drive and 7mΩ at a 10V gate drive. With a maximum drain current (ID) of 70A, it is suitable for high current applications such as power management, motor drive, etc.
The FDD6630A-VB is a high-performance single N-channel power MOSFET in a TO252 package, designed for high current and high efficiency applications. The MOSFET can withstand a drain-source voltage (VDS) of up to 30V, has a gate-source voltage (VGS) of ±20V, and is effectively turned on at a threshold voltage (Vth) of 1.7V. Manufactured using advanced Trench technology, the FDD6630A-VB exhibits extremely low on-resistance (RDS(ON)) of 9mΩ at a 4.5V gate drive and 7mΩ at a 10V gate drive. With a maximum drain current (ID) of 70A, it is suitable for high current applications such as power management, motor drive, etc.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
1. **Package type**: TO252
- This package type is a compact surface mount package suitable for circuit boards with limited space.
2. **Configuration**: Single N-channel
- Single N-channel MOSFET design, convenient for compatible use with a variety of control circuits.
3. **Drain-source voltage (VDS)**: 30V
- The maximum drain-source voltage is 30V, suitable for medium and low voltage power management applications.
4. **Gate-source voltage (VGS)**: ±20V
- Supports gate-source voltage of ±20V, which can cope with a variety of control signal requirements.
5. **Threshold voltage (Vth)**: 1.7V
- The low threshold voltage means that the MOSFET can be turned on at a lower control voltage, which improves the sensitivity of the circuit.
6. **On-resistance (RDS(ON))**:
- 9mΩ @ VGS = 4.5V
- 7mΩ @ VGS = 10V
- Low on-resistance reduces power loss and improves circuit efficiency.
7. **Drain current (ID)**: 70A
- High current carrying capability, making it suitable for high-power applications.
8. **Technology**: Trench
- Manufactured using Trench technology, which optimizes on-resistance and gate charge, improving overall performance.
1. **Package type**: TO252
- This package type is a compact surface mount package suitable for circuit boards with limited space.
2. **Configuration**: Single N-channel
- Single N-channel MOSFET design, convenient for compatible use with a variety of control circuits.
3. **Drain-source voltage (VDS)**: 30V
- The maximum drain-source voltage is 30V, suitable for medium and low voltage power management applications.
4. **Gate-source voltage (VGS)**: ±20V
- Supports gate-source voltage of ±20V, which can cope with a variety of control signal requirements.
5. **Threshold voltage (Vth)**: 1.7V
- The low threshold voltage means that the MOSFET can be turned on at a lower control voltage, which improves the sensitivity of the circuit.
6. **On-resistance (RDS(ON))**:
- 9mΩ @ VGS = 4.5V
- 7mΩ @ VGS = 10V
- Low on-resistance reduces power loss and improves circuit efficiency.
7. **Drain current (ID)**: 70A
- High current carrying capability, making it suitable for high-power applications.
8. **Technology**: Trench
- Manufactured using Trench technology, which optimizes on-resistance and gate charge, improving overall performance.
Domain and module applications：
Application fields and module examples
1. **Power management module**
The low on-resistance and high current capability of FDD6630A-VB make it very suitable for use in DC-DC converters, switching power supplies and power adapters. These features help improve power conversion efficiency and reduce power loss, making it suitable for use in portable devices, power adapters and high-efficiency power modules.
2. **Motor drive control**
In power tools, electric vehicles and industrial motor drive systems, FDD6630A-VB can provide stable current output and efficient switching performance. This makes it suitable for motor control applications that require high current drive, such as electric vehicle drive, speed control of power tools and motor control in industrial automation.
3. **Automotive electronics**
In automotive electronic systems, FDD6630A-VB can be used for power distribution, lighting control and battery management systems. Its high current carrying capacity and low on-resistance make it perform well in automotive electronic equipment, ensuring stable current control and reliable switching performance.
4. **Industrial Automation**
This MOSFET is suitable for driving high power loads such as relays, valves and heating elements in industrial automation control systems. Its high current capability and low power loss make it very suitable for industrial control and automation applications that require high performance and reliability.
1. **Power management module**
The low on-resistance and high current capability of FDD6630A-VB make it very suitable for use in DC-DC converters, switching power supplies and power adapters. These features help improve power conversion efficiency and reduce power loss, making it suitable for use in portable devices, power adapters and high-efficiency power modules.
2. **Motor drive control**
In power tools, electric vehicles and industrial motor drive systems, FDD6630A-VB can provide stable current output and efficient switching performance. This makes it suitable for motor control applications that require high current drive, such as electric vehicle drive, speed control of power tools and motor control in industrial automation.
3. **Automotive electronics**
In automotive electronic systems, FDD6630A-VB can be used for power distribution, lighting control and battery management systems. Its high current carrying capacity and low on-resistance make it perform well in automotive electronic equipment, ensuring stable current control and reliable switching performance.
4. **Industrial Automation**
This MOSFET is suitable for driving high power loads such as relays, valves and heating elements in industrial automation control systems. Its high current capability and low power loss make it very suitable for industrial control and automation applications that require high performance and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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