FDD6612-VB Product details
Product introduction:
FDD6612-VB is a high-performance N-channel MOSFET in TO-252 package, designed for high-efficiency power management and power conversion applications. The device has a drain-source voltage (VDS) of 30V, a gate voltage (VGS) range of ±20V, and a threshold voltage (Vth) of 1.7V, which is suitable for power control needs of various electronic devices. The on-resistance (RDS(ON)) of FDD6612-VB is 9mΩ at a gate voltage of 4.5V, and drops to 7mΩ at 10V, with excellent conductivity and low power consumption. The device has a maximum drain current (ID) of 70A and is manufactured using Trench technology, which ensures high switching speed and low conduction loss, and is suitable for application scenarios requiring high performance and high reliability.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package type**: TO-252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS = 4.5V
- 7mΩ @ VGS = 10V
- **Drain current (ID)**: 70A
- **Technology type**: Trench technology
Domain and module applications:
The characteristics of FDD6612-VB make it suitable for multiple fields and modules, especially in applications that require efficient power management:
1. **DC-DC Converters**: The low on-resistance and high current handling capability of FDD6612-VB make it very suitable for use in DC-DC converters, which can effectively reduce power loss and improve conversion efficiency. It is suitable for various power conversion needs, such as power adapters and power modules.
2. **Motor Drives**: Due to its high current capability and low RDS(ON), FDD6612-VB is suitable for motor drive circuits, can provide efficient current control, improve the performance and response speed of motor drive systems, and is widely used in industrial automation and power tools.
3. **Power Switches**: In power switch applications, FDD6612-VB can be used for efficient switch control, reducing power loss, and is widely used in various power management systems and load switches, such as computer power supplies and consumer electronics.
4. **Battery Management Systems**: This MOSFET can be used as a charge and discharge control in battery management systems to optimize battery performance and service life, ensure efficient operation of the battery, and is suitable for electric vehicles and portable electronic devices.
These application examples demonstrate the wide applicability of FDD6612-VB in a variety of power management and conversion scenarios, providing efficient solutions to meet the needs of different systems.
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