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FDD6612A-VB Product details
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Product Introduction
**FDD6612A-VB** is a high-performance single N-channel MOSFET in TO-252 package using advanced Trench technology. This MOSFET is designed for high-efficiency power management and switching applications and can operate stably under higher current and voltage conditions. Its maximum drain-source voltage is 30V and the gate-source voltage range is ±20V, providing good voltage tolerance and switching performance. FDD6612A-VB has a lower on-resistance (RDS(ON)) and a higher maximum drain current (ID), making it suitable for applications requiring high power and high efficiency.
**FDD6612A-VB** is a high-performance single N-channel MOSFET in TO-252 package using advanced Trench technology. This MOSFET is designed for high-efficiency power management and switching applications and can operate stably under higher current and voltage conditions. Its maximum drain-source voltage is 30V and the gate-source voltage range is ±20V, providing good voltage tolerance and switching performance. FDD6612A-VB has a lower on-resistance (RDS(ON)) and a higher maximum drain current (ID), making it suitable for applications requiring high power and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO-252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS = 4.5V
- 7mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 70A
- **Technology**: Trench technology
- **Package**: TO-252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS = 4.5V
- 7mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 70A
- **Technology**: Trench technology
Domain and module applications：
Application fields and modules
**FDD6612A-VB** is widely used in the following fields and modules due to its high current handling capability and low on-resistance:
1. **Switching Power Supply (SMPS)**: In the switching power supply design, FDD6612A-VB is used as the main switching element, which can effectively reduce switching losses and improve the overall efficiency of the system. It is particularly suitable for high power density application scenarios.
2. **DC-DC Converter**: The low on-resistance and high current capability of this MOSFET make it an ideal choice in DC-DC converters, which can efficiently convert voltage, improve conversion efficiency and reduce heat loss.
3. **Motor Drive**: In the motor drive circuit, FDD6612A-VB provides stable switching operation, which can efficiently control the start-up and operation of the motor, ensuring the reliability and performance of the motor drive system.
4. **Power amplifier**: In power amplifier applications, this MOSFET can handle larger currents, support efficient power amplification and stable power output, and is suitable for amplifier circuits with high power requirements.
5. **Battery management system**: In the battery management system, FDD6612A-VB is used as a charge and discharge control switch, which helps to safely and efficiently manage the battery charging and discharging process, and improve the overall efficiency and safety of the system.
**FDD6612A-VB** is widely used in the following fields and modules due to its high current handling capability and low on-resistance:
1. **Switching Power Supply (SMPS)**: In the switching power supply design, FDD6612A-VB is used as the main switching element, which can effectively reduce switching losses and improve the overall efficiency of the system. It is particularly suitable for high power density application scenarios.
2. **DC-DC Converter**: The low on-resistance and high current capability of this MOSFET make it an ideal choice in DC-DC converters, which can efficiently convert voltage, improve conversion efficiency and reduce heat loss.
3. **Motor Drive**: In the motor drive circuit, FDD6612A-VB provides stable switching operation, which can efficiently control the start-up and operation of the motor, ensuring the reliability and performance of the motor drive system.
4. **Power amplifier**: In power amplifier applications, this MOSFET can handle larger currents, support efficient power amplification and stable power output, and is suitable for amplifier circuits with high power requirements.
5. **Battery management system**: In the battery management system, FDD6612A-VB is used as a charge and discharge control switch, which helps to safely and efficiently manage the battery charging and discharging process, and improve the overall efficiency and safety of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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