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FDD6530-VB Product details
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FDD6530-VB MOSFET Product Introduction
The FDD6530-VB is a high-performance N-channel MOSFET in a TO-252 package designed for high current applications. It utilizes Trench technology to achieve low on-resistance and high current handling capability, making it suitable for circuits that require fast switching and low power losses. It has a drain-source voltage (VDS) of 20V and a maximum drain current (ID) of up to 100A, making it an excellent performer in applications such as power management, DC-DC converters, and power tools. The low threshold voltage (Vth) and low on-resistance of the FDD6530-VB enable it to provide excellent performance even at low voltage drive, making it suitable for a variety of high-efficiency and high-density circuit designs.
The FDD6530-VB is a high-performance N-channel MOSFET in a TO-252 package designed for high current applications. It utilizes Trench technology to achieve low on-resistance and high current handling capability, making it suitable for circuits that require fast switching and low power losses. It has a drain-source voltage (VDS) of 20V and a maximum drain current (ID) of up to 100A, making it an excellent performer in applications such as power management, DC-DC converters, and power tools. The low threshold voltage (Vth) and low on-resistance of the FDD6530-VB enable it to provide excellent performance even at low voltage drive, making it suitable for a variety of high-efficiency and high-density circuit designs.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
FDD6530-VB MOSFET Detailed parameter description
- **Package:** TO-252
- **Configuration:** Single-N-Channel
- **Drain-Source Voltage(VDS):** 20V
- **Gate-Source Voltage(VGS):** ±20V
- **Threshold Voltage(Vth):** 0.5V ~ 1.5V
- **On-Resistance(RDS(ON)):**
- 6mΩ @ VGS = 2.5V
- 4.5mΩ @ VGS = 4.5V
- **Maximum Drain Current(ID):** 100A
- **Technology:** Trench
- **Package:** TO-252
- **Configuration:** Single-N-Channel
- **Drain-Source Voltage(VDS):** 20V
- **Gate-Source Voltage(VGS):** ±20V
- **Threshold Voltage(Vth):** 0.5V ~ 1.5V
- **On-Resistance(RDS(ON)):**
- 6mΩ @ VGS = 2.5V
- 4.5mΩ @ VGS = 4.5V
- **Maximum Drain Current(ID):** 100A
- **Technology:** Trench
Domain and module applications：
FDD6530-VB MOSFET Application Fields and Modules
The design characteristics of FDD6530-VB MOSFET make it widely applicable in multiple application fields:
1. **Power Management System:** Due to its low on-resistance and high current handling capability, FDD6530-VB is an ideal choice in power management systems. It can be used in power switches, load switches and current protection circuits to help improve the efficiency and reliability of power systems.
2. **DC-DC Converter:** In DC-DC converters, FDD6530-VB provides excellent switching performance and low conduction losses, ensuring efficient operation of the converter. This makes it very suitable for high-power and high-density power conversion applications.
3. **Power Tool Drive Circuit:** For power tools and other equipment that require high current, the high current capability and low on-resistance of FDD6530-VB can ensure stable operating performance, especially reliability under high load conditions.
4. **Battery Management System:** In battery management systems, especially electric vehicles and energy storage systems, the high current carrying capacity and low loss characteristics of FDD6530-VB ensure the safety and efficiency of the battery charging and discharging process, and improve the performance of the overall system.
These application areas show the applicability of FDD6530-VB in various high-performance and high-current demand circuit designs.
The design characteristics of FDD6530-VB MOSFET make it widely applicable in multiple application fields:
1. **Power Management System:** Due to its low on-resistance and high current handling capability, FDD6530-VB is an ideal choice in power management systems. It can be used in power switches, load switches and current protection circuits to help improve the efficiency and reliability of power systems.
2. **DC-DC Converter:** In DC-DC converters, FDD6530-VB provides excellent switching performance and low conduction losses, ensuring efficient operation of the converter. This makes it very suitable for high-power and high-density power conversion applications.
3. **Power Tool Drive Circuit:** For power tools and other equipment that require high current, the high current capability and low on-resistance of FDD6530-VB can ensure stable operating performance, especially reliability under high load conditions.
4. **Battery Management System:** In battery management systems, especially electric vehicles and energy storage systems, the high current carrying capacity and low loss characteristics of FDD6530-VB ensure the safety and efficiency of the battery charging and discharging process, and improve the performance of the overall system.
These application areas show the applicability of FDD6530-VB in various high-performance and high-current demand circuit designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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