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FDD6296_NL-VB Product details
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Product Introduction
FDD6296_NL-VB is a high-performance single N-channel MOSFET in TO252 package, designed for applications requiring high current and low on-resistance. This MOSFET has a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V, and uses advanced Trench technology to optimize on-resistance and switching performance. Its low on-resistance and high current handling capability enable it to perform well in high-efficiency power management and power conversion systems.
FDD6296_NL-VB is a high-performance single N-channel MOSFET in TO252 package, designed for applications requiring high current and low on-resistance. This MOSFET has a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V, and uses advanced Trench technology to optimize on-resistance and switching performance. Its low on-resistance and high current handling capability enable it to perform well in high-efficiency power management and power conversion systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Drain current (ID)**: 80A
- **Technology**: Trench
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Drain current (ID)**: 80A
- **Technology**: Trench
Domain and module applications：
Applications and Modules
The characteristics of the FDD6296_NL-VB MOSFET make it suitable for multiple high-current and high-efficiency applications. Here are a few major application scenarios:
1. **Power Management System**:
- In switching power supplies (SMPS) and DC-DC converters, the low on-resistance of the FDD6296_NL-VB significantly improves energy efficiency and reduces power consumption. Its high current handling capability enables it to efficiently convert high current loads, thereby optimizing power supply performance.
2. **Motor Drive Circuits**:
- This MOSFET is ideal for motor drive applications such as brushless DC motors (BLDC) and stepper motor control systems. It is able to handle high current loads and provide fast switching capabilities, effectively improving the efficiency and response speed of motor drives.
3. **LED Driver**:
- In high-brightness LED lighting systems, the low on-resistance and high current handling capability of the FDD6296_NL-VB make it an ideal LED driver choice. Its excellent performance ensures high efficiency and long-term stable operation of the LED driver.
4. **Power Amplifier**:
- In RF power amplifiers and other high-power applications, the FDD6296_NL-VB provides reliable high current handling capability and low power loss. It can effectively handle high-power signals and is suitable for RF and audio power amplification applications that require high efficiency.
These applications demonstrate the excellent performance of the FDD6296_NL-VB MOSFET in high-current, high-efficiency scenarios, which can meet various high-load and high-efficiency requirements.
The characteristics of the FDD6296_NL-VB MOSFET make it suitable for multiple high-current and high-efficiency applications. Here are a few major application scenarios:
1. **Power Management System**:
- In switching power supplies (SMPS) and DC-DC converters, the low on-resistance of the FDD6296_NL-VB significantly improves energy efficiency and reduces power consumption. Its high current handling capability enables it to efficiently convert high current loads, thereby optimizing power supply performance.
2. **Motor Drive Circuits**:
- This MOSFET is ideal for motor drive applications such as brushless DC motors (BLDC) and stepper motor control systems. It is able to handle high current loads and provide fast switching capabilities, effectively improving the efficiency and response speed of motor drives.
3. **LED Driver**:
- In high-brightness LED lighting systems, the low on-resistance and high current handling capability of the FDD6296_NL-VB make it an ideal LED driver choice. Its excellent performance ensures high efficiency and long-term stable operation of the LED driver.
4. **Power Amplifier**:
- In RF power amplifiers and other high-power applications, the FDD6296_NL-VB provides reliable high current handling capability and low power loss. It can effectively handle high-power signals and is suitable for RF and audio power amplification applications that require high efficiency.
These applications demonstrate the excellent performance of the FDD6296_NL-VB MOSFET in high-current, high-efficiency scenarios, which can meet various high-load and high-efficiency requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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