中文
English
FDD6035-VB Product details
Back to previous pageProduct introduction：
FDD6035AR-VB MOSFET Product Introduction
The FDD6035AR-VB is a high-performance monolithic N-channel MOSFET in a TO-252 package. It has a drain-source withstand voltage (VDS) of 30V and performs well under high current and low on-resistance (RDS(ON)) requirements. The device uses Trench technology to provide extremely low on-resistance (RDS(ON) is only 5mΩ@VGS=10V) and supports a maximum drain current (ID) of up to 80A. Its gate-source voltage range is ±20V and the threshold voltage (Vth) is 1.7V, making it suitable for low-voltage, high-efficiency applications. The high switching speed and excellent conductivity of the FDD6035AR-VB make it an ideal choice for high power density and high frequency applications.
The FDD6035AR-VB is a high-performance monolithic N-channel MOSFET in a TO-252 package. It has a drain-source withstand voltage (VDS) of 30V and performs well under high current and low on-resistance (RDS(ON)) requirements. The device uses Trench technology to provide extremely low on-resistance (RDS(ON) is only 5mΩ@VGS=10V) and supports a maximum drain current (ID) of up to 80A. Its gate-source voltage range is ±20V and the threshold voltage (Vth) is 1.7V, making it suitable for low-voltage, high-efficiency applications. The high switching speed and excellent conductivity of the FDD6035AR-VB make it an ideal choice for high power density and high frequency applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
FDD6035AR-VB Detailed parameter description
- **Package type**: TO-252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ@VGS=4.5V
- 5mΩ@VGS=10V
- **Maximum drain current (ID)**: 80A
- **Technology type**: Trench technology
- **Ton time (ton)**: <30ns (typical value, depends on the application circuit)
- **Ton time (toff)**: <60ns (typical value, depends on the application circuit)
- **Gate charge (Qg)**: 50nC (typ.)
- **Reverse recovery time (trr)**: <100ns (typ.)
- **Drain-source reverse diode current (IS)**: 80A
- **Operating temperature range**: -55°C to 150°C
- **Thermal resistance (RθJA)**: 45°C/W
- **Package type**: TO-252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ@VGS=4.5V
- 5mΩ@VGS=10V
- **Maximum drain current (ID)**: 80A
- **Technology type**: Trench technology
- **Ton time (ton)**: <30ns (typical value, depends on the application circuit)
- **Ton time (toff)**: <60ns (typical value, depends on the application circuit)
- **Gate charge (Qg)**: 50nC (typ.)
- **Reverse recovery time (trr)**: <100ns (typ.)
- **Drain-source reverse diode current (IS)**: 80A
- **Operating temperature range**: -55°C to 150°C
- **Thermal resistance (RθJA)**: 45°C/W
Domain and module applications：
FDD6035AR-VB Application Fields and Module Examples
FDD6035AR-VB MOSFET is suitable for multiple high-efficiency application scenarios due to its low on-resistance, high drain current and fast switching capability. The following are its typical application fields and module examples:
1. **DC-DC converter module**:
- In the DC-DC converter, FDD6035AR-VB can be used as the main switching element to improve conversion efficiency and reduce energy consumption. Its low on-resistance and high current capability help reduce power loss and improve conversion efficiency, especially suitable for high-frequency and high-power density power management systems.
2. **Motor drive module**:
- In the motor drive circuit, FDD6035AR-VB can be used for high current switching to support efficient driving and control of the motor. Its fast switching characteristics and low on-resistance help improve the response speed and operating efficiency of the motor, especially suitable for use in power tools and household appliances.
3. **Power Amplifier Module**:
- In audio and RF power amplifiers, the FDD6035AR-VB can be used in switching amplifier circuits to provide high efficiency and low distortion. Its high switching speed and low on-resistance can reduce power loss and improve the overall performance of the amplifier.
4. **Battery Management System (BMS)**:
- In battery management systems, the FDD6035AR-VB is used in battery protection and balancing circuits to ensure the safety and stability of the battery pack. Its high current carrying capacity and low on-resistance ensure efficient performance and reliability of the system, especially for electric vehicles and energy storage systems.
With its excellent electrical performance, the FDD6035AR-VB excels in applications that require high current handling and high-frequency switching, making it an ideal choice for a variety of high-efficiency circuit designs.
FDD6035AR-VB MOSFET is suitable for multiple high-efficiency application scenarios due to its low on-resistance, high drain current and fast switching capability. The following are its typical application fields and module examples:
1. **DC-DC converter module**:
- In the DC-DC converter, FDD6035AR-VB can be used as the main switching element to improve conversion efficiency and reduce energy consumption. Its low on-resistance and high current capability help reduce power loss and improve conversion efficiency, especially suitable for high-frequency and high-power density power management systems.
2. **Motor drive module**:
- In the motor drive circuit, FDD6035AR-VB can be used for high current switching to support efficient driving and control of the motor. Its fast switching characteristics and low on-resistance help improve the response speed and operating efficiency of the motor, especially suitable for use in power tools and household appliances.
3. **Power Amplifier Module**:
- In audio and RF power amplifiers, the FDD6035AR-VB can be used in switching amplifier circuits to provide high efficiency and low distortion. Its high switching speed and low on-resistance can reduce power loss and improve the overall performance of the amplifier.
4. **Battery Management System (BMS)**:
- In battery management systems, the FDD6035AR-VB is used in battery protection and balancing circuits to ensure the safety and stability of the battery pack. Its high current carrying capacity and low on-resistance ensure efficient performance and reliability of the system, especially for electric vehicles and energy storage systems.
With its excellent electrical performance, the FDD6035AR-VB excels in applications that require high current handling and high-frequency switching, making it an ideal choice for a variety of high-efficiency circuit designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
