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FDD6035AL-VB Product details
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1. FDD6035AL-VB Product Introduction
FDD6035AL-VB is a high-performance single N-channel MOSFET in TO-252 package. With a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of 20V, this MOSFET, combined with advanced Trench technology, provides extremely low on-resistance (RDS(ON)), making it perform well in high-current applications. Its 1.7V threshold voltage (Vth) ensures good switching performance at low gate drive voltage, making the FDD6035AL-VB particularly suitable for power management, load switching and other high-current applications that require high efficiency and low conduction loss.
FDD6035AL-VB is a high-performance single N-channel MOSFET in TO-252 package. With a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of 20V, this MOSFET, combined with advanced Trench technology, provides extremely low on-resistance (RDS(ON)), making it perform well in high-current applications. Its 1.7V threshold voltage (Vth) ensures good switching performance at low gate drive voltage, making the FDD6035AL-VB particularly suitable for power management, load switching and other high-current applications that require high efficiency and low conduction loss.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. FDD6035AL-VB Detailed parameter description
- **Package type**: TO-252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 80A
- **Technology type**: Trench
- **Package type**: TO-252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 80A
- **Technology type**: Trench
Domain and module applications：
3. Application fields and module description of FDD6035AL-VB
1. **DC-DC converter**:
The extremely low on-resistance and high current carrying capacity of FDD6035AL-VB make it very suitable for use in DC-DC converters. In the switching stage of the converter, this MOSFET can effectively reduce switching losses and improve conversion efficiency, especially under high-frequency switching and high-load conditions.
2. **Power management system**:
In the power management system, this MOSFET is used for load switching and power path control. Its low on-resistance ensures efficient power transmission, reduces system power consumption and heat generation, making it suitable for a variety of applications requiring precise current control.
3. **Motor driver**:
In the motor driver, FDD6035AL-VB is able to handle high current loads and provide stable switching performance. Its low RDS(ON) and high ID values enable high efficiency and long life when driving high-power motors.
4. **High-power load switching**:
Due to its excellent current carrying capacity and low on-resistance, the FDD6035AL-VB is also very suitable for high-power load switching. Whether in industrial equipment, automotive electronics or other high-power applications, this MOSFET can ensure low losses and high reliability.
With its excellent electrical characteristics and high performance, the FDD6035AL-VB meets the needs of modern electronic equipment for efficient and high-current switching, and is an ideal choice in many fields.
1. **DC-DC converter**:
The extremely low on-resistance and high current carrying capacity of FDD6035AL-VB make it very suitable for use in DC-DC converters. In the switching stage of the converter, this MOSFET can effectively reduce switching losses and improve conversion efficiency, especially under high-frequency switching and high-load conditions.
2. **Power management system**:
In the power management system, this MOSFET is used for load switching and power path control. Its low on-resistance ensures efficient power transmission, reduces system power consumption and heat generation, making it suitable for a variety of applications requiring precise current control.
3. **Motor driver**:
In the motor driver, FDD6035AL-VB is able to handle high current loads and provide stable switching performance. Its low RDS(ON) and high ID values enable high efficiency and long life when driving high-power motors.
4. **High-power load switching**:
Due to its excellent current carrying capacity and low on-resistance, the FDD6035AL-VB is also very suitable for high-power load switching. Whether in industrial equipment, automotive electronics or other high-power applications, this MOSFET can ensure low losses and high reliability.
With its excellent electrical characteristics and high performance, the FDD6035AL-VB meets the needs of modern electronic equipment for efficient and high-current switching, and is an ideal choice in many fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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