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FDD6030-VB Product details
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Product Introduction
The FDD6030-VB is a high-performance single N-channel MOSFET in a TO252 package. Designed for low voltage and high current applications, the device features a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V. With its ultra-low on-resistance (RDS(ON)) and drain current (ID) of up to 70A, the FDD6030-VB is suitable for high-efficiency power switching and load driving. The MOSFET is manufactured using Trench technology, which provides excellent switching characteristics and high efficiency.
The FDD6030-VB is a high-performance single N-channel MOSFET in a TO252 package. Designed for low voltage and high current applications, the device features a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V. With its ultra-low on-resistance (RDS(ON)) and drain current (ID) of up to 70A, the FDD6030-VB is suitable for high-efficiency power switching and load driving. The MOSFET is manufactured using Trench technology, which provides excellent switching characteristics and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: FDD6030-VB
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 7mΩ@VGS=10V
- 9mΩ@VGS=4.5V
- **Drain current (ID)**: 70A
- **Technology**: Trench
- **Model**: FDD6030-VB
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 7mΩ@VGS=10V
- 9mΩ@VGS=4.5V
- **Drain current (ID)**: 70A
- **Technology**: Trench
Domain and module applications：
Applications and module examples: The low on-resistance and high current capability of the FDD6030-VB make it very suitable for applications that require high efficiency and high current, such as DC-DC Converters and Motor Driver Modules. In these applications, the FDD6030-VB can provide stable switching performance, reduce energy loss and heat, and improve the efficiency of the overall system. In addition, this MOSFET is also very suitable for high-frequency switching power supplies and power management systems, where its high switching speed and low on-resistance can significantly improve system performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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