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FDD6030-NL-VB Product details
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FDD6030-NL-VB MOSFET Product Introduction
FDD6030-NL-VB is a high-performance single N-channel power MOSFET in TO252 package, suitable for applications such as high-efficiency power conversion and motor drive. With a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V, this MOSFET can withstand high voltage fluctuations. Its threshold voltage (Vth) is 1.7V, ensuring effective turn-on even at low voltage. Manufactured with advanced Trench technology, the FDD6030-NL-VB has a low on-resistance (RDS(ON)), which is 9mΩ at a 4.5V gate drive and 7mΩ at a 10V gate drive. Its maximum continuous drain current (ID) can reach 70A, making it suitable for high current applications.
FDD6030-NL-VB is a high-performance single N-channel power MOSFET in TO252 package, suitable for applications such as high-efficiency power conversion and motor drive. With a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V, this MOSFET can withstand high voltage fluctuations. Its threshold voltage (Vth) is 1.7V, ensuring effective turn-on even at low voltage. Manufactured with advanced Trench technology, the FDD6030-NL-VB has a low on-resistance (RDS(ON)), which is 9mΩ at a 4.5V gate drive and 7mΩ at a 10V gate drive. Its maximum continuous drain current (ID) can reach 70A, making it suitable for high current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
1. **Package type**: TO252
- Compact surface mount package, suitable for circuit design with limited space.
2. **Configuration**: Single N-channel
- Single channel design, easy to integrate with control circuit.
3. **Drain-source voltage (VDS)**: 30V
- Maximum drain-source voltage, providing guarantee for high-efficiency low-voltage power supply design.
4. **Gate-source voltage (VGS)**: ±20V
- Wide gate-source voltage range, supporting a wider range of control signals.
5. **Threshold voltage (Vth)**: 1.7V
- Lower threshold voltage, ensuring that the MOSFET can be effectively turned on at a lower control voltage.
6. **On-resistance (RDS(ON))**:
- 9mΩ @ VGS = 4.5V
- 7mΩ @ VGS = 10V
- Low on-resistance, reducing power loss and improving circuit efficiency.
7. **Drain current (ID)**: 70A
- High current carrying capacity, suitable for applications requiring high current.
8. **Technology**: Trench
- Using trench technology, the on-resistance and gate charge are optimized, improving device performance.
1. **Package type**: TO252
- Compact surface mount package, suitable for circuit design with limited space.
2. **Configuration**: Single N-channel
- Single channel design, easy to integrate with control circuit.
3. **Drain-source voltage (VDS)**: 30V
- Maximum drain-source voltage, providing guarantee for high-efficiency low-voltage power supply design.
4. **Gate-source voltage (VGS)**: ±20V
- Wide gate-source voltage range, supporting a wider range of control signals.
5. **Threshold voltage (Vth)**: 1.7V
- Lower threshold voltage, ensuring that the MOSFET can be effectively turned on at a lower control voltage.
6. **On-resistance (RDS(ON))**:
- 9mΩ @ VGS = 4.5V
- 7mΩ @ VGS = 10V
- Low on-resistance, reducing power loss and improving circuit efficiency.
7. **Drain current (ID)**: 70A
- High current carrying capacity, suitable for applications requiring high current.
8. **Technology**: Trench
- Using trench technology, the on-resistance and gate charge are optimized, improving device performance.
Domain and module applications：
Applicable fields and module examples
1. **Power management module**
FDD6030-NL-VB MOSFET can be used in DC-DC converters and power adapters. With its low on-resistance and high current capability, it can improve power conversion efficiency and reduce heat generation. It is suitable for use in portable devices that require high efficiency and low heat generation.
2. **Motor drive control**
In motor drive applications such as power tools and electric vehicles, the high current carrying capacity and low RDS(ON) characteristics of this MOSFET can provide stable current output, reduce energy loss, and improve the overall performance and reliability of the system.
3. **Automotive electronics**
FDD6030-NL-VB can be used in power distribution and control modules in automobiles. It can cope with the high current requirements in the complex electrical systems of automobiles and ensure the efficient operation of the vehicle's electronic systems.
4. **Industrial Automation**
In industrial automation control systems, this MOSFET can be used to drive high-power loads such as relays, lamps and heating elements, providing reliable switching control and current management.
1. **Power management module**
FDD6030-NL-VB MOSFET can be used in DC-DC converters and power adapters. With its low on-resistance and high current capability, it can improve power conversion efficiency and reduce heat generation. It is suitable for use in portable devices that require high efficiency and low heat generation.
2. **Motor drive control**
In motor drive applications such as power tools and electric vehicles, the high current carrying capacity and low RDS(ON) characteristics of this MOSFET can provide stable current output, reduce energy loss, and improve the overall performance and reliability of the system.
3. **Automotive electronics**
FDD6030-NL-VB can be used in power distribution and control modules in automobiles. It can cope with the high current requirements in the complex electrical systems of automobiles and ensure the efficient operation of the vehicle's electronic systems.
4. **Industrial Automation**
In industrial automation control systems, this MOSFET can be used to drive high-power loads such as relays, lamps and heating elements, providing reliable switching control and current management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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