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FDD6030L-VB Product details
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FDD6030L-VB Product Introduction
FDD6030L-VB is a high-performance single-channel N-channel MOSFET in TO-252 package, suitable for various power conversion applications. The device has a drain-source voltage (VDS) of 30V and a low on-resistance (RDS(ON)), which is 6mΩ at VGS of 4.5V and only 5mΩ at VGS of 10V, and can carry a current of up to 80A. Its gate voltage (VGS) range is ±20V and has a low threshold voltage (Vth) of only 1.7V. Manufactured with advanced Trench technology, the device has low on-resistance, high current capability and excellent switching performance, making it ideal for high-efficiency power management applications.
FDD6030L-VB is a high-performance single-channel N-channel MOSFET in TO-252 package, suitable for various power conversion applications. The device has a drain-source voltage (VDS) of 30V and a low on-resistance (RDS(ON)), which is 6mΩ at VGS of 4.5V and only 5mΩ at VGS of 10V, and can carry a current of up to 80A. Its gate voltage (VGS) range is ±20V and has a low threshold voltage (Vth) of only 1.7V. Manufactured with advanced Trench technology, the device has low on-resistance, high current capability and excellent switching performance, making it ideal for high-efficiency power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
FDD6030L-VB Detailed parameter description
- **Package type**: TO-252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Drain current (ID)**: 80A
- **Technology type**: Trench technology
- **Package type**: TO-252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Drain current (ID)**: 80A
- **Technology type**: Trench technology
Domain and module applications：
FDD6030L-VB Application Fields and Modules
FDD6030L-VB is suitable for a variety of fields and modules, especially in power management and power conversion applications that require high efficiency and high reliability. For example:
1. **DC-DC Converters**: Due to its low on-resistance and high current capability, FDD6030L-VB performs well in DC-DC converters, especially in circuits that require high power density.
2. **Motor Drives**: This MOSFET can be used in motor drive circuits to provide low conduction losses, thereby improving the overall efficiency and performance of the system.
3. **Load Switches**: Due to its fast switching characteristics and low RDS(ON), FDD6030L-VB is very suitable for use as a load switch, which can effectively control the transmission and switching of power.
4. **Battery Management Systems**: In battery management systems, the device can achieve efficient charge and discharge control and extend the battery life.
Through these application examples, it can be seen that the FDD6030L-VB is a very flexible and efficient MOSFET device that can meet the high performance requirements of different fields.
FDD6030L-VB is suitable for a variety of fields and modules, especially in power management and power conversion applications that require high efficiency and high reliability. For example:
1. **DC-DC Converters**: Due to its low on-resistance and high current capability, FDD6030L-VB performs well in DC-DC converters, especially in circuits that require high power density.
2. **Motor Drives**: This MOSFET can be used in motor drive circuits to provide low conduction losses, thereby improving the overall efficiency and performance of the system.
3. **Load Switches**: Due to its fast switching characteristics and low RDS(ON), FDD6030L-VB is very suitable for use as a load switch, which can effectively control the transmission and switching of power.
4. **Battery Management Systems**: In battery management systems, the device can achieve efficient charge and discharge control and extend the battery life.
Through these application examples, it can be seen that the FDD6030L-VB is a very flexible and efficient MOSFET device that can meet the high performance requirements of different fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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