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FDD6030BL-VB Product details
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Product Introduction
**FDD6030BL-VB** is a high-performance single N-channel MOSFET in TO-252 package. Using Trench technology, this MOSFET has low on-resistance and high current handling capability, making it suitable for applications requiring efficient power switching and current control. Its maximum drain-source voltage is 30V and the gate-source voltage range is ±20V, which allows it to operate stably over a wide voltage range. With fast switching speeds and excellent thermal management performance, this MOSFET is suitable for use in high-frequency and high-power density electronic devices.
**FDD6030BL-VB** is a high-performance single N-channel MOSFET in TO-252 package. Using Trench technology, this MOSFET has low on-resistance and high current handling capability, making it suitable for applications requiring efficient power switching and current control. Its maximum drain-source voltage is 30V and the gate-source voltage range is ±20V, which allows it to operate stably over a wide voltage range. With fast switching speeds and excellent thermal management performance, this MOSFET is suitable for use in high-frequency and high-power density electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO-252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS = 4.5V
- 7mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 70A
- **Technology**: Trench technology
- **Package**: TO-252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS = 4.5V
- 7mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 70A
- **Technology**: Trench technology
Domain and module applications：
Applications and modules
**FDD6030BL-VB** is widely used in the following fields and modules due to its high current carrying capacity and low on-resistance:
1. **Switching Power Supply (SMPS)**: Its low on-resistance and high current handling capability make it suitable for use as the main switching element in the switching power supply, which can effectively reduce switching losses and improve system efficiency.
2. **DC-DC Converter**: In the DC-DC converter, the high current capability and low on-resistance of this MOSFET help improve conversion efficiency, reduce heat loss, and improve overall performance.
3. **Motor Drive**: In the motor drive circuit, FDD6030BL-VB can be used as an efficient switching element to control the switching state of the motor and provide smooth current transmission.
4. **Power Amplifier**: Used in the power amplifier circuit, this MOSFET can handle high current and effectively control the power output to ensure the stable operation of the amplifier.
5. **Battery Management System**: In the battery management system, this MOSFET can be used to control the charge and discharge of the battery. Through its high current capability, it ensures that the battery is safe and efficient during the charge and discharge process.
**FDD6030BL-VB** is widely used in the following fields and modules due to its high current carrying capacity and low on-resistance:
1. **Switching Power Supply (SMPS)**: Its low on-resistance and high current handling capability make it suitable for use as the main switching element in the switching power supply, which can effectively reduce switching losses and improve system efficiency.
2. **DC-DC Converter**: In the DC-DC converter, the high current capability and low on-resistance of this MOSFET help improve conversion efficiency, reduce heat loss, and improve overall performance.
3. **Motor Drive**: In the motor drive circuit, FDD6030BL-VB can be used as an efficient switching element to control the switching state of the motor and provide smooth current transmission.
4. **Power Amplifier**: Used in the power amplifier circuit, this MOSFET can handle high current and effectively control the power output to ensure the stable operation of the amplifier.
5. **Battery Management System**: In the battery management system, this MOSFET can be used to control the charge and discharge of the battery. Through its high current capability, it ensures that the battery is safe and efficient during the charge and discharge process.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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