中文
English
FDD5N53-VB Product details
Back to previous pageProduct introduction：
Product Introduction
FDD5N53-VB is a single N-channel MOSFET in TO252 package with 650V drain-source voltage (VDS) and ±30V gate-source voltage (VGS) ratings. The device uses advanced super junction (SJ) multi-epitaxial (Multi-EPI) technology to provide low on-resistance and high-efficiency switching performance, making it ideal for use in high-voltage applications.
FDD5N53-VB is a single N-channel MOSFET in TO252 package with 650V drain-source voltage (VDS) and ±30V gate-source voltage (VGS) ratings. The device uses advanced super junction (SJ) multi-epitaxial (Multi-EPI) technology to provide low on-resistance and high-efficiency switching performance, making it ideal for use in high-voltage applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ @ VGS=10V
- **Drain current (ID)**: 5A
- **Technology type**: SJ (super junction) multi-epitaxial (Multi-EPI)
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ @ VGS=10V
- **Drain current (ID)**: 5A
- **Technology type**: SJ (super junction) multi-epitaxial (Multi-EPI)
Domain and module applications：
Applications and modules: FDD5N53-VB MOSFET is widely used in high-voltage power management, electric vehicle charging piles, photovoltaic inverters, and industrial control. In power management modules, it can be used to improve the switching efficiency and voltage resistance of the power supply to ensure stable operation under high voltage conditions. In electric vehicle charging piles, the device can withstand high voltage and high current environments, improve charging efficiency and reduce losses. In photovoltaic inverters, it helps improve energy conversion efficiency and ensure reliability and stability in various working environments. In addition, in industrial control systems, this MOSFET can be used in high-voltage drive modules to support complex motor control and other high-voltage application requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
