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FDD5N53TM-VB Product details
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Product Introduction
FDD5N53TM-VB is a single N-channel MOSFET in TO252 package with 650V drain-source voltage (VDS) and ±30V gate-source voltage (VGS), designed for high voltage applications. The device uses advanced Super Junction Multi-EPI technology to ensure low on-resistance and efficient switching performance at high voltage. It is suitable for power management and conversion systems that require high voltage, high reliability and low power consumption.
FDD5N53TM-VB is a single N-channel MOSFET in TO252 package with 650V drain-source voltage (VDS) and ±30V gate-source voltage (VGS), designed for high voltage applications. The device uses advanced Super Junction Multi-EPI technology to ensure low on-resistance and efficient switching performance at high voltage. It is suitable for power management and conversion systems that require high voltage, high reliability and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ @ VGS=10V
- **Drain current (ID)**: 5A
- **Technology**: Super Junction Multi-EPI
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ @ VGS=10V
- **Drain current (ID)**: 5A
- **Technology**: Super Junction Multi-EPI
Domain and module applications：
Applications and modules
The FDD5N53TM-VB MOSFET is suitable for multiple applications with high voltage and high efficiency requirements. Here are a few major application scenarios:
1. **Power Management Module**:
- This MOSFET is used in switching power supplies (SMPS) to efficiently convert power, especially in applications that require high voltage input. Its low on-resistance and high breakdown voltage make it an ideal choice for high voltage buck-boost converters.
2. **Industrial Control Systems**:
- In industrial equipment and automation systems, the FDD5N53TM-VB can be used for motor drive, power regulation and voltage control to ensure stable operation of the system in a high voltage environment.
3. **Lighting Systems**:
- This MOSFET is also suitable for the power drive part of LED lighting systems, especially in high voltage LED drivers that require high efficiency and long life. Its high breakdown voltage and low on-resistance characteristics ensure reliability and energy efficiency under long-term operation.
4. **New Energy Systems**:
- In new energy systems such as photovoltaic inverters and wind power converters, FDD5N53TM-VB provides high-efficiency and high-reliability power conversion, especially for high-voltage DC to AC conversion applications.
Through applications in these fields, FDD5N53TM-VB can not only provide high-efficiency energy conversion, but also maintain excellent performance and long-term reliability under high voltage and high load conditions.
The FDD5N53TM-VB MOSFET is suitable for multiple applications with high voltage and high efficiency requirements. Here are a few major application scenarios:
1. **Power Management Module**:
- This MOSFET is used in switching power supplies (SMPS) to efficiently convert power, especially in applications that require high voltage input. Its low on-resistance and high breakdown voltage make it an ideal choice for high voltage buck-boost converters.
2. **Industrial Control Systems**:
- In industrial equipment and automation systems, the FDD5N53TM-VB can be used for motor drive, power regulation and voltage control to ensure stable operation of the system in a high voltage environment.
3. **Lighting Systems**:
- This MOSFET is also suitable for the power drive part of LED lighting systems, especially in high voltage LED drivers that require high efficiency and long life. Its high breakdown voltage and low on-resistance characteristics ensure reliability and energy efficiency under long-term operation.
4. **New Energy Systems**:
- In new energy systems such as photovoltaic inverters and wind power converters, FDD5N53TM-VB provides high-efficiency and high-reliability power conversion, especially for high-voltage DC to AC conversion applications.
Through applications in these fields, FDD5N53TM-VB can not only provide high-efficiency energy conversion, but also maintain excellent performance and long-term reliability under high voltage and high load conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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