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FDD5N50-VB Product details
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FDD5N50-VB MOSFET Product Introduction
FDD5N50-VB is a single N-channel power MOSFET in TO252 package, suitable for high voltage and high efficiency applications. With a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, the device can provide reliable performance in high voltage environments. Its turn-on voltage (Vth) is 3.5V, ensuring stability under various operating conditions. Using the advanced Super Junction multi-epitaxial process (SJ_Multi-EPI), this MOSFET achieves an ideal balance between on-resistance (RDS(ON)) and switching losses. Its typical on-resistance is 1000mΩ@VGS=10V, and the maximum continuous drain current (ID) is 5A.
FDD5N50-VB is a single N-channel power MOSFET in TO252 package, suitable for high voltage and high efficiency applications. With a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, the device can provide reliable performance in high voltage environments. Its turn-on voltage (Vth) is 3.5V, ensuring stability under various operating conditions. Using the advanced Super Junction multi-epitaxial process (SJ_Multi-EPI), this MOSFET achieves an ideal balance between on-resistance (RDS(ON)) and switching losses. Its typical on-resistance is 1000mΩ@VGS=10V, and the maximum continuous drain current (ID) is 5A.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
FDD5N50-VB MOSFET Detailed parameter description
- **Package type (Package): ** TO252
- **Configuration (Configuration): ** Single-N-Channel
- **Drain-source voltage (VDS): ** 650V
- **Gate-source voltage (VGS): ** ±30V
- **Throwing voltage (Vth): ** 3.5V
- **On-resistance (RDS(ON)): ** 1000mΩ@VGS=10V
- **Maximum drain current (ID): ** 5A
- **Technology type (Technology): ** Super Junction Multi-EPI
- **Package type (Package): ** TO252
- **Configuration (Configuration): ** Single-N-Channel
- **Drain-source voltage (VDS): ** 650V
- **Gate-source voltage (VGS): ** ±30V
- **Throwing voltage (Vth): ** 3.5V
- **On-resistance (RDS(ON)): ** 1000mΩ@VGS=10V
- **Maximum drain current (ID): ** 5A
- **Technology type (Technology): ** Super Junction Multi-EPI
Domain and module applications：
Applications and module examples
The FDD5N50-VB MOSFET is suitable for a variety of high-voltage applications, especially in modules that require high efficiency and low losses. Here are a few typical application examples:
1. **Power modules:** The device can be used in high-efficiency switch mode power supplies (SMPS) and uninterruptible power supply (UPS) systems. Its high voltage withstand capability enables it to provide stable performance during high-voltage conversion and energy transmission, reducing energy loss and improving overall system efficiency.
2. **LED drive circuit:** In LED lighting applications, the low on-resistance and high-voltage characteristics of the FDD5N50-VB enable it to effectively control the switching state of the LED, ensuring stable operation and high efficiency of the LED.
3. **Industrial motor drive:** The high-voltage characteristics and low switching losses of this MOSFET make it suitable for use in industrial motor drives, especially in situations where fast switching and efficient energy transmission are required, such as AC motor drives and servo motor control.
4. **EV Charger:** FDD5N50-VB can also be used in EV charger modules to ensure stability and efficient conversion during high-voltage charging, thereby extending the life of the charger and improving charging efficiency.
These application examples demonstrate the wide application potential of FDD5N50-VB in fields that require high-voltage processing and efficient energy management.
The FDD5N50-VB MOSFET is suitable for a variety of high-voltage applications, especially in modules that require high efficiency and low losses. Here are a few typical application examples:
1. **Power modules:** The device can be used in high-efficiency switch mode power supplies (SMPS) and uninterruptible power supply (UPS) systems. Its high voltage withstand capability enables it to provide stable performance during high-voltage conversion and energy transmission, reducing energy loss and improving overall system efficiency.
2. **LED drive circuit:** In LED lighting applications, the low on-resistance and high-voltage characteristics of the FDD5N50-VB enable it to effectively control the switching state of the LED, ensuring stable operation and high efficiency of the LED.
3. **Industrial motor drive:** The high-voltage characteristics and low switching losses of this MOSFET make it suitable for use in industrial motor drives, especially in situations where fast switching and efficient energy transmission are required, such as AC motor drives and servo motor control.
4. **EV Charger:** FDD5N50-VB can also be used in EV charger modules to ensure stability and efficient conversion during high-voltage charging, thereby extending the life of the charger and improving charging efficiency.
These application examples demonstrate the wide application potential of FDD5N50-VB in fields that require high-voltage processing and efficient energy management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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