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FDD5N50TM-VB Product details
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FDD5N50TM-VB MOSFET Product Introduction
FDD5N50TM-VB is a monolithic N-channel power MOSFET in TO-252 package. The device features excellent switching performance and low on-resistance (RDS(ON) is only 1000mΩ@VGS=10V) at a high withstand voltage of 650V, making it suitable for use in applications requiring high voltage and high efficiency. It uses Super Junction (SJ_Multi-EPI) technology to improve device performance while reducing power consumption. The MOSFET has a wide gate voltage range of ±30V and a threshold voltage (Vth) of 3.5V, and can operate stably over a wide operating range. The maximum continuous drain current (ID) is 5A, making it an excellent performer in medium-power applications.
FDD5N50TM-VB is a monolithic N-channel power MOSFET in TO-252 package. The device features excellent switching performance and low on-resistance (RDS(ON) is only 1000mΩ@VGS=10V) at a high withstand voltage of 650V, making it suitable for use in applications requiring high voltage and high efficiency. It uses Super Junction (SJ_Multi-EPI) technology to improve device performance while reducing power consumption. The MOSFET has a wide gate voltage range of ±30V and a threshold voltage (Vth) of 3.5V, and can operate stably over a wide operating range. The maximum continuous drain current (ID) is 5A, making it an excellent performer in medium-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
FDD5N50TM-VB Detailed parameter description
- **Package type**: TO-252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ@VGS=10V
- **Maximum drain current (ID)**: 5A
- **Technology type**: Superjunction multi-epitaxial (SJ_Multi-EPI)
- **Ton time (ton)**: <50ns (typical, depends on the application circuit)
- **Ton time (toff)**: <200ns (typical, depends on the application circuit)
- **Breakdown voltage**: 650V
- **Gate charge (Qg)**: 35nC (typ.)
- **Reverse recovery time (trr)**: <200ns (typ.)
- **Drain-source reverse diode current (IS)**: 5A
- **Operating temperature range**: -55°C to 150°C
- **Thermal resistance (RθJA)**: 62°C/W
- **Package type**: TO-252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ@VGS=10V
- **Maximum drain current (ID)**: 5A
- **Technology type**: Superjunction multi-epitaxial (SJ_Multi-EPI)
- **Ton time (ton)**: <50ns (typical, depends on the application circuit)
- **Ton time (toff)**: <200ns (typical, depends on the application circuit)
- **Breakdown voltage**: 650V
- **Gate charge (Qg)**: 35nC (typ.)
- **Reverse recovery time (trr)**: <200ns (typ.)
- **Drain-source reverse diode current (IS)**: 5A
- **Operating temperature range**: -55°C to 150°C
- **Thermal resistance (RθJA)**: 62°C/W
Domain and module applications：
FDD5N50TM-VB Applications and Module Examples
FDD5N50TM-VB MOSFET is very suitable for applications that require high voltage and high efficiency due to its high withstand voltage, low on-resistance and fast switching speed. The following are its typical application areas and module examples:
1. **Switching Power Supply (SMPS) Module**:
- In switching power supply modules in industrial and consumer electronic devices, FDD5N50TM-VB can be used for the main power switch to improve power conversion efficiency and reduce heat generation. Its high withstand voltage of 650V ensures that it can cope with input voltage fluctuations and surge currents, providing stable power output.
2. **Inverter Module**:
- In solar photovoltaic power generation systems and uninterruptible power supply (UPS) systems, FDD5N50TM-VB is used in inverter circuits to handle high voltage conversion and improve energy efficiency. Its fast switching characteristics help reduce power losses and improve system efficiency.
3. **EV Charger Module**:
- In the high-voltage conversion module of the EV charger, the FDD5N50TM-VB can be used as a high-voltage switching element to ensure a stable charging current and improve charging efficiency. Its reliable performance and high-voltage resistance enable it to have long-term working stability in this application.
4. **Lighting Driver Module**:
- In LED driver circuits and other high-voltage lighting equipment, the FDD5N50TM-VB can be used in power factor correction (PFC) circuits to improve lighting efficiency and reduce power consumption. Its high voltage resistance ensures stability under long-term operation.
FDD5N50TM-VB is suitable for a variety of application environments that require high voltage and high efficiency. With its excellent electrical performance, it is widely used in industrial, automotive, consumer electronics and other fields.
FDD5N50TM-VB MOSFET is very suitable for applications that require high voltage and high efficiency due to its high withstand voltage, low on-resistance and fast switching speed. The following are its typical application areas and module examples:
1. **Switching Power Supply (SMPS) Module**:
- In switching power supply modules in industrial and consumer electronic devices, FDD5N50TM-VB can be used for the main power switch to improve power conversion efficiency and reduce heat generation. Its high withstand voltage of 650V ensures that it can cope with input voltage fluctuations and surge currents, providing stable power output.
2. **Inverter Module**:
- In solar photovoltaic power generation systems and uninterruptible power supply (UPS) systems, FDD5N50TM-VB is used in inverter circuits to handle high voltage conversion and improve energy efficiency. Its fast switching characteristics help reduce power losses and improve system efficiency.
3. **EV Charger Module**:
- In the high-voltage conversion module of the EV charger, the FDD5N50TM-VB can be used as a high-voltage switching element to ensure a stable charging current and improve charging efficiency. Its reliable performance and high-voltage resistance enable it to have long-term working stability in this application.
4. **Lighting Driver Module**:
- In LED driver circuits and other high-voltage lighting equipment, the FDD5N50TM-VB can be used in power factor correction (PFC) circuits to improve lighting efficiency and reduce power consumption. Its high voltage resistance ensures stability under long-term operation.
FDD5N50TM-VB is suitable for a variety of application environments that require high voltage and high efficiency. With its excellent electrical performance, it is widely used in industrial, automotive, consumer electronics and other fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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