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FDD5N50TF-VB Product details
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1. FDD5N50TF-VB Product Introduction
FDD5N50TF-VB is a high-voltage, low-loss single N-channel MOSFET in a TO-252 package. With a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of 30V, the device is suitable for a variety of high-voltage applications. With its Super Junction (SJ_Multi-EPI) technology, the FDD5N50TF-VB exhibits excellent switching characteristics under high-voltage and high-frequency operation while ensuring low on-resistance (RDS(ON)) and conduction losses. The device is particularly suitable for switching power supplies (SMPS) in power management systems, lighting applications, and other fields that require high efficiency and high reliability.
FDD5N50TF-VB is a high-voltage, low-loss single N-channel MOSFET in a TO-252 package. With a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of 30V, the device is suitable for a variety of high-voltage applications. With its Super Junction (SJ_Multi-EPI) technology, the FDD5N50TF-VB exhibits excellent switching characteristics under high-voltage and high-frequency operation while ensuring low on-resistance (RDS(ON)) and conduction losses. The device is particularly suitable for switching power supplies (SMPS) in power management systems, lighting applications, and other fields that require high efficiency and high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. FDD5N50TF-VB Detailed parameter description
- **Package type**: TO-252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ @ VGS=10V
- **Maximum drain current (ID)**: 5A
- **Technology type**: Super junction multi-layer epitaxial (SJ_Multi-EPI)
- **Package type**: TO-252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ @ VGS=10V
- **Maximum drain current (ID)**: 5A
- **Technology type**: Super junction multi-layer epitaxial (SJ_Multi-EPI)
Domain and module applications：
3. Application fields and module description of FDD5N50TF-VB
1. **Switching power supply (SMPS)**:
FDD5N50TF-VB is suitable for high-voltage conversion modules in switching power supplies. With its high drain-source voltage capability of 650V and low conduction loss, it can effectively improve the conversion efficiency of the power supply and reduce the heat loss of the system. It is particularly suitable for applications under high-voltage input and output conditions.
2. **LED lighting driver**:
In LED lighting applications, this MOSFET can be used as part of the drive circuit to effectively control the brightness and current of the LED. Its high voltage characteristics ensure reliability and efficiency when driving high-power LEDs, especially in the field of industrial and commercial lighting.
3. **Industrial automation control**:
FDD5N50TF-VB is also suitable for motor drive and high-voltage control modules in industrial automation control systems. Its high voltage resistance and reliability ensure long-term stable operation in harsh industrial environments and can cope with grid fluctuations and transient voltage shocks.
4. **Uninterruptible Power Supply (UPS)**:
In an uninterruptible power supply system, this device can be used in the inverter part to help achieve efficient AC/DC conversion, improve the energy efficiency of the system and extend the battery life.
With its advantages of high voltage and low on-resistance, FDD5N50TF-VB provides an ideal solution for applications that require high efficiency, high reliability and long life.
1. **Switching power supply (SMPS)**:
FDD5N50TF-VB is suitable for high-voltage conversion modules in switching power supplies. With its high drain-source voltage capability of 650V and low conduction loss, it can effectively improve the conversion efficiency of the power supply and reduce the heat loss of the system. It is particularly suitable for applications under high-voltage input and output conditions.
2. **LED lighting driver**:
In LED lighting applications, this MOSFET can be used as part of the drive circuit to effectively control the brightness and current of the LED. Its high voltage characteristics ensure reliability and efficiency when driving high-power LEDs, especially in the field of industrial and commercial lighting.
3. **Industrial automation control**:
FDD5N50TF-VB is also suitable for motor drive and high-voltage control modules in industrial automation control systems. Its high voltage resistance and reliability ensure long-term stable operation in harsh industrial environments and can cope with grid fluctuations and transient voltage shocks.
4. **Uninterruptible Power Supply (UPS)**:
In an uninterruptible power supply system, this device can be used in the inverter part to help achieve efficient AC/DC conversion, improve the energy efficiency of the system and extend the battery life.
With its advantages of high voltage and low on-resistance, FDD5N50TF-VB provides an ideal solution for applications that require high efficiency, high reliability and long life.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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