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FDD5N50NZ-VB Product details
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Product Introduction
The FDD5N50NZ-VB is a high voltage, single N-channel MOSFET in a TO252 package suitable for a variety of high voltage applications. The device has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, enabling it to operate stably in a high voltage environment. With its superjunction (SJ) multi-epitaxial (Multi-EPI) technology, the FDD5N50NZ-VB provides excellent on-resistance (RDS(ON)) and switching characteristics to meet high-efficiency requirements.
The FDD5N50NZ-VB is a high voltage, single N-channel MOSFET in a TO252 package suitable for a variety of high voltage applications. The device has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, enabling it to operate stably in a high voltage environment. With its superjunction (SJ) multi-epitaxial (Multi-EPI) technology, the FDD5N50NZ-VB provides excellent on-resistance (RDS(ON)) and switching characteristics to meet high-efficiency requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: FDD5N50NZ-VB
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ@VGS=10V
- **Drain current (ID)**: 5A
- **Technology**: Super junction (SJ) multi-epitaxial (Multi-EPI)
- **Model**: FDD5N50NZ-VB
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ@VGS=10V
- **Drain current (ID)**: 5A
- **Technology**: Super junction (SJ) multi-epitaxial (Multi-EPI)
Domain and module applications：
Application fields and module examples: The high voltage characteristics and durability of the FDD5N50NZ-VB make it very suitable for power management modules and EV charging stations. In these applications, the high voltage resistance and low on-resistance of the device help improve the efficiency of power conversion, reduce heat generation, and extend the service life of the system. In addition, the FDD5N50NZ-VB can also be used in lighting drivers and industrial motor control systems, which require MOSFETs to operate reliably at high voltage and high frequency while providing stable output performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
