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FDD5N50NZTM-VB Product details
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FDD5N50NZTM-VB MOSFET Product Introduction
FDD5N50NZTM-VB is a high voltage, high performance single-stage N-channel (Single-N-Channel) MOSFET in TO252 package. It is designed for applications requiring high voltage and medium current handling capability, with a maximum drain-source voltage (VDS) of 650V, suitable for high voltage environments. The MOSFET has an on-resistance (RDS(ON)) of 1000mΩ (at VGS of 10V) and a maximum drain current (ID) of 5A. Using SJ_Multi-EPI technology, this MOSFET provides stable switching performance and good thermal management characteristics in high voltage operation, making it ideal for high voltage power control and switching applications.
FDD5N50NZTM-VB is a high voltage, high performance single-stage N-channel (Single-N-Channel) MOSFET in TO252 package. It is designed for applications requiring high voltage and medium current handling capability, with a maximum drain-source voltage (VDS) of 650V, suitable for high voltage environments. The MOSFET has an on-resistance (RDS(ON)) of 1000mΩ (at VGS of 10V) and a maximum drain current (ID) of 5A. Using SJ_Multi-EPI technology, this MOSFET provides stable switching performance and good thermal management characteristics in high voltage operation, making it ideal for high voltage power control and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 1000mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 1000mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **High voltage power management**:
The FDD5N50NZTM-VB is ideal for high voltage power management systems due to its high drain-source voltage of 650V. For example, in AC-DC power converters and high voltage DC-DC converters, this MOSFET can stably handle high voltage inputs to ensure high efficiency and safety of the system.
2. **High voltage inverter**:
In high voltage inverter applications, such as solar inverters and wind inverters, the FDD5N50NZTM-VB can provide reliable switching performance and stable current control. Its high voltage withstand capability and SJ_Multi-EPI technology make it an excellent performer in inverter systems and can effectively handle power conversion in high voltage environments.
3. **Power switch module**:
This MOSFET is suitable for use in various power switch modules, especially in applications that require high voltage and medium current control. For example, in motor drives, battery protection, and power distribution units, the FDD5N50NZTM-VB can provide stable switching performance to ensure the reliability of system operation.
4. **High voltage protection circuit**:
FDD5N50NZTM-VB can also be used as a switching element in a high voltage protection circuit. It can work stably in a high voltage environment and is suitable for overvoltage protection and power limiting applications to ensure the safety and stability of the circuit under high voltage conditions.
FDD5N50NZTM-VB MOSFET is an ideal choice for high voltage power management, inverters, high voltage protection, and power switching applications due to its high voltage tolerance, stable switching performance, and SJ_Multi-EPI technology.
1. **High voltage power management**:
The FDD5N50NZTM-VB is ideal for high voltage power management systems due to its high drain-source voltage of 650V. For example, in AC-DC power converters and high voltage DC-DC converters, this MOSFET can stably handle high voltage inputs to ensure high efficiency and safety of the system.
2. **High voltage inverter**:
In high voltage inverter applications, such as solar inverters and wind inverters, the FDD5N50NZTM-VB can provide reliable switching performance and stable current control. Its high voltage withstand capability and SJ_Multi-EPI technology make it an excellent performer in inverter systems and can effectively handle power conversion in high voltage environments.
3. **Power switch module**:
This MOSFET is suitable for use in various power switch modules, especially in applications that require high voltage and medium current control. For example, in motor drives, battery protection, and power distribution units, the FDD5N50NZTM-VB can provide stable switching performance to ensure the reliability of system operation.
4. **High voltage protection circuit**:
FDD5N50NZTM-VB can also be used as a switching element in a high voltage protection circuit. It can work stably in a high voltage environment and is suitable for overvoltage protection and power limiting applications to ensure the safety and stability of the circuit under high voltage conditions.
FDD5N50NZTM-VB MOSFET is an ideal choice for high voltage power management, inverters, high voltage protection, and power switching applications due to its high voltage tolerance, stable switching performance, and SJ_Multi-EPI technology.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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