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FDD5N50NZF-VB Product details
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Product Introduction - FDD5N50NZF-VB
FDD5N50NZF-VB is a single N-channel MOSFET designed for high voltage applications in TO252 package. It can handle drain-source voltage (VDS) up to 650V and gate-source voltage (VGS) of ±30V, suitable for use in high voltage environments. Its threshold voltage (Vth) is 3.5V, and it uses SJ_Multi-EPI technology to enhance performance and reliability. Despite its on-resistance (RDS(ON)) of 1000mΩ@VGS=10V, FDD5N50NZF-VB performs well in high voltage applications and can effectively handle high voltage and high power tasks.
FDD5N50NZF-VB is a single N-channel MOSFET designed for high voltage applications in TO252 package. It can handle drain-source voltage (VDS) up to 650V and gate-source voltage (VGS) of ±30V, suitable for use in high voltage environments. Its threshold voltage (Vth) is 3.5V, and it uses SJ_Multi-EPI technology to enhance performance and reliability. Despite its on-resistance (RDS(ON)) of 1000mΩ@VGS=10V, FDD5N50NZF-VB performs well in high voltage applications and can effectively handle high voltage and high power tasks.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ @ VGS=10V
- **Drain current (ID)**: 5A
- **Technology type**: SJ_Multi-EPI
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ @ VGS=10V
- **Drain current (ID)**: 5A
- **Technology type**: SJ_Multi-EPI
Domain and module applications：
Applications and Modules
The FDD5N50NZF-VB MOSFET is suitable for the following areas and modules:
1. **High Voltage Power Management**: The 650V drain-source voltage of the FDD5N50NZF-VB makes it ideal for use in high voltage power management systems, such as high voltage DC-DC converters and switching power supplies. This MOSFET provides reliable switching performance in these high voltage environments, ensuring the stability and efficiency of the power system.
2. **Industrial Power and Control**: In industrial power systems and control circuits, this MOSFET can be used for switching and regulating high voltage loads. Its high voltage withstand capability enables stable operation in industrial equipment, such as power conditioners and power protection systems.
3. **Power Electronics**: In power electronics applications, such as high voltage inverters and power converters, the FDD5N50NZF-VB is able to effectively handle high voltage switching requirements. This helps achieve efficient power conversion and control, optimizing equipment performance.
4. **High-voltage motor drive and protection**: This MOSFET is suitable for switching and protection functions in high-voltage motor drive systems. Under high-voltage operation, it can provide reliable switching performance to ensure the safety and stability of the motor drive system.
By using the FDD5N50NZF-VB MOSFET, designers can obtain stable and reliable switching control in high-voltage applications to meet various system design needs with high voltage and high power requirements.
The FDD5N50NZF-VB MOSFET is suitable for the following areas and modules:
1. **High Voltage Power Management**: The 650V drain-source voltage of the FDD5N50NZF-VB makes it ideal for use in high voltage power management systems, such as high voltage DC-DC converters and switching power supplies. This MOSFET provides reliable switching performance in these high voltage environments, ensuring the stability and efficiency of the power system.
2. **Industrial Power and Control**: In industrial power systems and control circuits, this MOSFET can be used for switching and regulating high voltage loads. Its high voltage withstand capability enables stable operation in industrial equipment, such as power conditioners and power protection systems.
3. **Power Electronics**: In power electronics applications, such as high voltage inverters and power converters, the FDD5N50NZF-VB is able to effectively handle high voltage switching requirements. This helps achieve efficient power conversion and control, optimizing equipment performance.
4. **High-voltage motor drive and protection**: This MOSFET is suitable for switching and protection functions in high-voltage motor drive systems. Under high-voltage operation, it can provide reliable switching performance to ensure the safety and stability of the motor drive system.
By using the FDD5N50NZF-VB MOSFET, designers can obtain stable and reliable switching control in high-voltage applications to meet various system design needs with high voltage and high power requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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