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FDD5N50NZFTM-VB Product details
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FDD5N50NZFTM-VB Product Introduction
**FDD5N50NZFTM-VB** is a high voltage N-Channel MOSFET in TO252 package, designed for high voltage and medium current applications. Its maximum drain-to-source voltage (VDS) is 650V, which can work stably in high voltage environment. The threshold voltage (Vth) of this MOSFET is 3.5V, and it can be turned on at a moderate gate-source voltage. The on-resistance (RDS(ON)) of FDD5N50NZFTM-VB is 1000mΩ @ VGS=10V, providing lower power consumption. Its maximum drain current (ID) is 5A, which is suitable for medium current load applications. The use of SJ_Multi-EPI technology improves the high voltage performance and durability of the MOSFET.
**Key Features:**
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Maximum Drain-to-Source Voltage (VDS)**: 650V
- **Gate-Source Voltage (VGS)**: ±30V
- **Threshold Voltage (Vth)**: 3.5V
- **On-Resistance (RDS(ON))**: 1000mΩ @ VGS=10V
- **Maximum Drain Current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
**FDD5N50NZFTM-VB** is a high voltage N-Channel MOSFET in TO252 package, designed for high voltage and medium current applications. Its maximum drain-to-source voltage (VDS) is 650V, which can work stably in high voltage environment. The threshold voltage (Vth) of this MOSFET is 3.5V, and it can be turned on at a moderate gate-source voltage. The on-resistance (RDS(ON)) of FDD5N50NZFTM-VB is 1000mΩ @ VGS=10V, providing lower power consumption. Its maximum drain current (ID) is 5A, which is suitable for medium current load applications. The use of SJ_Multi-EPI technology improves the high voltage performance and durability of the MOSFET.
**Key Features:**
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Maximum Drain-to-Source Voltage (VDS)**: 650V
- **Gate-Source Voltage (VGS)**: ±30V
- **Threshold Voltage (Vth)**: 3.5V
- **On-Resistance (RDS(ON))**: 1000mΩ @ VGS=10V
- **Maximum Drain Current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- This package provides a moderate size and good heat dissipation performance, suitable for integration in medium power applications.
- **Configuration**: Single-N-Channel
- Suitable for various switching and amplification circuits, capable of providing stable performance under medium current conditions.
- **Maximum drain to source voltage (VDS)**: 650V
- Supports high voltage environment, suitable for circuit design requiring high voltage tolerance.
- **Gate-source voltage (VGS)**: ±30V
- Allows a higher gate-source voltage range, supporting the needs of a variety of control circuits.
- **Threshold voltage (Vth)**: 3.5V
- Starts to conduct at a moderate gate-source voltage, suitable for medium and low voltage control applications.
- **On-resistance (RDS(ON))**: 1000mΩ @ VGS=10V
- Lower on-resistance helps reduce power consumption and improve efficiency, especially in high current applications.
- **Maximum drain current (ID)**: 5A
- Able to handle medium current loads, suitable for medium power switching and amplification applications.
- **Technology**: SJ_Multi-EPI
- Use of SJ_Multi-EPI technology enhances high voltage performance and ruggedness, improving the overall reliability and stability of the MOSFET.
- **Package**: TO252
- This package provides a moderate size and good heat dissipation performance, suitable for integration in medium power applications.
- **Configuration**: Single-N-Channel
- Suitable for various switching and amplification circuits, capable of providing stable performance under medium current conditions.
- **Maximum drain to source voltage (VDS)**: 650V
- Supports high voltage environment, suitable for circuit design requiring high voltage tolerance.
- **Gate-source voltage (VGS)**: ±30V
- Allows a higher gate-source voltage range, supporting the needs of a variety of control circuits.
- **Threshold voltage (Vth)**: 3.5V
- Starts to conduct at a moderate gate-source voltage, suitable for medium and low voltage control applications.
- **On-resistance (RDS(ON))**: 1000mΩ @ VGS=10V
- Lower on-resistance helps reduce power consumption and improve efficiency, especially in high current applications.
- **Maximum drain current (ID)**: 5A
- Able to handle medium current loads, suitable for medium power switching and amplification applications.
- **Technology**: SJ_Multi-EPI
- Use of SJ_Multi-EPI technology enhances high voltage performance and ruggedness, improving the overall reliability and stability of the MOSFET.
Domain and module applications：
Applications and module examples
1. **High Voltage Switches**:
FDD5N50NZFTM-VB is suitable for high voltage switching applications, such as high voltage power switches. In high voltage environments, it can stably switch current to ensure the reliability and safety of the circuit.
2. **Power Management**:
In power management circuits, this MOSFET can be used to regulate and protect high voltage power supplies, ensure stable power output, and prevent overvoltage and overcurrent conditions.
3. **Inverters**:
FDD5N50NZFTM-VB can be used as the main switching element of the inverter, which can work stably in a high voltage environment, convert DC power to AC power, and improve the overall performance and efficiency of the inverter.
4. **Motor Drivers**:
Despite its relatively low current carrying capacity, the FDD5N50NZFTM-VB can stably drive the motor and provide efficient motor control in motor drive applications that require high voltage.
5. **High Voltage Circuit Protection**:
This MOSFET can be used as a protection device in high voltage circuits, such as overvoltage protection circuits. When an abnormal situation occurs in the circuit, it can safely cut off the current and protect other components from damage.
1. **High Voltage Switches**:
FDD5N50NZFTM-VB is suitable for high voltage switching applications, such as high voltage power switches. In high voltage environments, it can stably switch current to ensure the reliability and safety of the circuit.
2. **Power Management**:
In power management circuits, this MOSFET can be used to regulate and protect high voltage power supplies, ensure stable power output, and prevent overvoltage and overcurrent conditions.
3. **Inverters**:
FDD5N50NZFTM-VB can be used as the main switching element of the inverter, which can work stably in a high voltage environment, convert DC power to AC power, and improve the overall performance and efficiency of the inverter.
4. **Motor Drivers**:
Despite its relatively low current carrying capacity, the FDD5N50NZFTM-VB can stably drive the motor and provide efficient motor control in motor drive applications that require high voltage.
5. **High Voltage Circuit Protection**:
This MOSFET can be used as a protection device in high voltage circuits, such as overvoltage protection circuits. When an abnormal situation occurs in the circuit, it can safely cut off the current and protect other components from damage.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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