FDD5N50-NL-VB Product details
Product introduction:
The FDD5N50-NL-VB is a single N-channel MOSFET in a TO252 package, designed for high voltage applications. With a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, the device can provide reliable performance in a high voltage environment. Its gate threshold voltage (Vth) is 3.5V, which is suitable for switching operations with higher gate voltages. The on-resistance (RDS(ON)) of the FDD5N50-NL-VB is 1000mΩ at VGS=10V, supporting a drain current (ID) of up to 5A. This MOSFET using SJ_Multi-EPI technology has good switching characteristics and thermal stability, and is very suitable for applications requiring high voltage and high reliability.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ @ VGS=10V
- **Drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
- **Operating temperature range**: -55°C to 175°C
- **Maximum power dissipation (Ptot)**: 75W
- **Input capacitance (Ciss)**: 1400pF (typical)
- **Switching speed**: Suitable for medium and high frequency applications
Domain and module applications:
1. **Power management system**:
The FDD5N50-NL-VB can be widely used in high voltage power management systems, such as high voltage DC-DC converters and power switches. Its high drain-source voltage and high on-resistance make it suitable for high voltage power supplies that need to handle high voltage and relatively low current.
2. **Industrial power**:
In industrial power systems, the FDD5N50-NL-VB can be used for power switching and voltage regulation of industrial equipment. Its high voltage tolerance and moderate on-resistance enable it to provide reliable switching performance in high voltage industrial power supplies, suitable for motor drives and industrial power converters.
3. **Lighting control**:
The MOSFET is also suitable for high voltage lighting control systems, such as switching and dimming control of high voltage lamps. Its high voltage and high current handling capabilities can support the control needs of high power lamps, ensuring stable and reliable operation.
4. **High-voltage switch applications**:
FDD5N50-NL-VB performs well in high-voltage switch applications, such as high-voltage switch power supplies and battery management systems. Its high-voltage resistance enables it to provide stable switch control in power management systems that require high voltage, and is suitable for situations that need to handle high voltage and high power.
In summary, FDD5N50-NL-VB MOSFET has a wide range of application potentials in power management, industrial power supplies, lighting control, and high-voltage switch applications, and is particularly suitable for power control and switching operations in high-voltage environments.
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