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FDD5N50F-VB Product details
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FDD5N50F-VB MOSFET Product Introduction
FDD5N50F-VB is a high voltage N-channel MOSFET in TO-252 package. It is designed for applications requiring high voltage switching and power management. Using SJ_Multi-EPI technology, this MOSFET can withstand drain-source voltage (VDS) up to 650V and has a continuous drain current (ID) of 5A. At a gate voltage of 10V, its on-resistance (RDS(ON)) is 1000mΩ. These features enable the FDD5N50F-VB to provide stable and reliable switching performance in high voltage environments.
FDD5N50F-VB is a high voltage N-channel MOSFET in TO-252 package. It is designed for applications requiring high voltage switching and power management. Using SJ_Multi-EPI technology, this MOSFET can withstand drain-source voltage (VDS) up to 650V and has a continuous drain current (ID) of 5A. At a gate voltage of 10V, its on-resistance (RDS(ON)) is 1000mΩ. These features enable the FDD5N50F-VB to provide stable and reliable switching performance in high voltage environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type:** TO-252
- **Configuration:** Single N-channel
- **VDS (drain-source voltage):** 650V
- **VGS (gate-source voltage):** ±30V
- **Vth (gate-source threshold voltage):** 3.5V
- **RDS(ON) (on-resistance):**
- 1000mΩ at 10V
- **ID (continuous leakage current):** 5A
- **Technology:** SJ_Multi-EPI
- **Package type:** TO-252
- **Configuration:** Single N-channel
- **VDS (drain-source voltage):** 650V
- **VGS (gate-source voltage):** ±30V
- **Vth (gate-source threshold voltage):** 3.5V
- **RDS(ON) (on-resistance):**
- 1000mΩ at 10V
- **ID (continuous leakage current):** 5A
- **Technology:** SJ_Multi-EPI
Domain and module applications：
Application Examples
The high voltage and high current characteristics of the FDD5N50F-VB MOSFET make it suitable for a variety of high voltage switching and power management applications. Here are some typical application areas:
1. **High Voltage Power Switch:** Due to its high voltage withstand capability of 650V, the FDD5N50F-VB is very suitable for high voltage power switching applications, such as high voltage DC-DC converters and power management systems, which can stably switch power in a high voltage environment.
2. **Industrial Motor Control:** In motor drive applications that require high voltage, this MOSFET can effectively control the motor current and is widely used in industrial motors, automation equipment and power tools to provide reliable switching control.
3. **Power Protection:** The high voltage withstand capability of this MOSFET makes it suitable for use in power protection circuits, such as overvoltage protection and overcurrent protection circuits, to protect electronic equipment from high voltage shocks and current overloads.
4. **Inverter Applications:** In high voltage inverter systems, such as solar inverters and other high voltage inverter applications, the FDD5N50F-VB can provide efficient power switches to ensure efficient and stable operation of the inverter.
5. **Battery Management System (BMS):** For the battery management system of high voltage battery packs, the FDD5N50F-VB can provide effective current control and protection to ensure safety and efficiency during battery charging and discharging.
The high voltage and high current characteristics of the FDD5N50F-VB MOSFET make it suitable for a variety of high voltage switching and power management applications. Here are some typical application areas:
1. **High Voltage Power Switch:** Due to its high voltage withstand capability of 650V, the FDD5N50F-VB is very suitable for high voltage power switching applications, such as high voltage DC-DC converters and power management systems, which can stably switch power in a high voltage environment.
2. **Industrial Motor Control:** In motor drive applications that require high voltage, this MOSFET can effectively control the motor current and is widely used in industrial motors, automation equipment and power tools to provide reliable switching control.
3. **Power Protection:** The high voltage withstand capability of this MOSFET makes it suitable for use in power protection circuits, such as overvoltage protection and overcurrent protection circuits, to protect electronic equipment from high voltage shocks and current overloads.
4. **Inverter Applications:** In high voltage inverter systems, such as solar inverters and other high voltage inverter applications, the FDD5N50F-VB can provide efficient power switches to ensure efficient and stable operation of the inverter.
5. **Battery Management System (BMS):** For the battery management system of high voltage battery packs, the FDD5N50F-VB can provide effective current control and protection to ensure safety and efficiency during battery charging and discharging.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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