中文
English
FDD5N50FTM-VB Product details
Back to previous pageProduct introduction：
Product Introduction
The FDD5N50F-VB is a high voltage N-channel MOSFET in a TO252 package. Designed to handle high voltage and high power applications, this MOSFET has a maximum drain-source voltage of 650V and a maximum drain current of 5A. It uses SJ_Multi-EPI technology to provide excellent voltage resistance and stability, allowing it to perform well in high voltage environments. The FDD5N50F-VB is suitable for switching and power management applications that require high voltage resistance and reliability. Despite its high on-resistance, it can still provide reliable performance in high voltage applications.
The FDD5N50F-VB is a high voltage N-channel MOSFET in a TO252 package. Designed to handle high voltage and high power applications, this MOSFET has a maximum drain-source voltage of 650V and a maximum drain current of 5A. It uses SJ_Multi-EPI technology to provide excellent voltage resistance and stability, allowing it to perform well in high voltage environments. The FDD5N50F-VB is suitable for switching and power management applications that require high voltage resistance and reliability. Despite its high on-resistance, it can still provide reliable performance in high voltage applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (V_DS)**: 650V
- **Maximum gate-source voltage (V_GS)**: ±30V
- **Threshold voltage (V_th)**: 3.5V
- **On-resistance (R_DS(ON))**:
- 1000mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: 5A
- **Technology**: SJ_Multi-EPI
- **Package**: TO252
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (V_DS)**: 650V
- **Maximum gate-source voltage (V_GS)**: ±30V
- **Threshold voltage (V_th)**: 3.5V
- **On-resistance (R_DS(ON))**:
- 1000mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: 5A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and modules
The high voltage characteristics of FDD5N50F-VB make it widely used in several key areas and modules:
1. **High voltage power switch**: FDD5N50F-VB is suitable for power systems that require high voltage switch control. Its maximum drain-source voltage of 650V enables it to effectively handle switching operations in high voltage power supplies, ensuring the reliability and stability of the system under high voltage conditions. This is especially important in applications such as industrial power supplies, converters and regulators.
2. **High voltage power converter**: In high voltage power converters, this MOSFET is able to handle power conversion tasks under high voltage. Although its on-resistance is high, its high voltage withstand capability makes it suitable for power conversion applications with high voltage input, helping to improve the stability and safety of the converter.
3. **Motor drive system**: FDD5N50F-VB can be used in high voltage motor drive systems. In motor drive applications, it can provide high-voltage switch control, effectively manage the high voltage requirements during motor startup and operation, and ensure the normal operation and reliability of the system.
4. **High-voltage protection circuit**: Due to its high voltage resistance characteristics, this MOSFET is also used in high-voltage protection circuits. In high-voltage protection circuits, it can effectively withstand overvoltage shocks and protect other circuit components from high voltage damage, thereby improving the safety and stability of the system.
In summary, FDD5N50F-VB is a MOSFET suitable for high-voltage applications. It is widely used in high-voltage power switches, high-voltage power converters, motor drive systems, and high-voltage protection circuits. Its high voltage resistance and stability enable it to perform well in these fields and improve the reliability and safety of the system.
The high voltage characteristics of FDD5N50F-VB make it widely used in several key areas and modules:
1. **High voltage power switch**: FDD5N50F-VB is suitable for power systems that require high voltage switch control. Its maximum drain-source voltage of 650V enables it to effectively handle switching operations in high voltage power supplies, ensuring the reliability and stability of the system under high voltage conditions. This is especially important in applications such as industrial power supplies, converters and regulators.
2. **High voltage power converter**: In high voltage power converters, this MOSFET is able to handle power conversion tasks under high voltage. Although its on-resistance is high, its high voltage withstand capability makes it suitable for power conversion applications with high voltage input, helping to improve the stability and safety of the converter.
3. **Motor drive system**: FDD5N50F-VB can be used in high voltage motor drive systems. In motor drive applications, it can provide high-voltage switch control, effectively manage the high voltage requirements during motor startup and operation, and ensure the normal operation and reliability of the system.
4. **High-voltage protection circuit**: Due to its high voltage resistance characteristics, this MOSFET is also used in high-voltage protection circuits. In high-voltage protection circuits, it can effectively withstand overvoltage shocks and protect other circuit components from high voltage damage, thereby improving the safety and stability of the system.
In summary, FDD5N50F-VB is a MOSFET suitable for high-voltage applications. It is widely used in high-voltage power switches, high-voltage power converters, motor drive systems, and high-voltage protection circuits. Its high voltage resistance and stability enable it to perform well in these fields and improve the reliability and safety of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
