FDD5N50FTF-VB Product details
Product introduction:
The FDD5N50FTF-VB is a high voltage single N-channel MOSFET in a TO252 package, specially designed to handle high voltage and high power applications. Its drain-source voltage (VDS) is as high as 650V, which can work stably in a high voltage environment. The gate-source voltage (VGS) supports a high tolerance of ±30V, which enhances the flexibility of circuit design. The turn-on threshold voltage (Vth) is 3.5V, which allows it to be turned on at a lower gate voltage. The on-resistance (RDS(ON)) of this MOSFET is 1000mΩ at a gate drive of 10V, which is suitable for power switching applications in high voltage power supplies. Its continuous drain current (ID) is 5A, which can handle medium power requirements. Using advanced SJ_Multi-EPI technology, the FDD5N50FTF-VB has excellent electrical performance and thermal management capabilities.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package type**: TO252
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Turning threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ @ VGS=10V
- **Continuous drain current (ID)**: 5A
- **Technology type**: SJ_Multi-EPI technology
- **Application**: High voltage switching, power management, power conversion and other fields
Domain and module applications:
1. **High voltage power management**: FDD5N50FTF-VB is very suitable for high voltage power management systems such as AC-DC converters and high voltage DC power supplies. Its high drain-source voltage (VDS) and high voltage tolerance enable it to work stably in high voltage environments, ensuring the reliability of the power system.
2. **Switching power supply (SMPS)**: In switching power supply design, FDD5N50FTF-VB can be used as the main switching element. Its high voltage handling capability and relatively low on-resistance help improve the efficiency of the switching power supply and reduce power loss.
3. **Power converter**: This MOSFET is suitable for various power converters, such as switching applications in DC-DC converters. Due to its high voltage tolerance, it can effectively handle power conversion tasks under high voltage conditions.
4. **Motor Control**: In high-voltage motor control systems, the high voltage and high power capabilities of the FDD5N50FTF-VB enable it to effectively drive high-voltage motors. Its stable performance and high current handling capabilities contribute to efficient operation and control of motors.
5. **Industrial Power Equipment**: Due to its high voltage handling capability and excellent performance, the FDD5N50FTF-VB is suitable for industrial power equipment such as power converters and uninterruptible power supply (UPS) systems. These applications require handling high voltage and high power, and the FDD5N50FTF-VB is able to provide a reliable solution.
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