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FDD3N50NZTM-VB Product details
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FDD3N50NZTM-VB MOSFET Product Introduction
FDD3N50NZTM-VB is a high voltage single-stage N-channel MOSFET in TO252 package, designed for high voltage applications. This MOSFET has a maximum drain-source voltage (VDS) of 650V and can operate stably in a high voltage environment. Its on-resistance (RDS(ON)) is 2750mΩ at VGS of 4.5V and 2200mΩ at VGS of 10V. FDD3N50NZTM-VB uses Plannar technology to provide stable switching performance and is suitable for high voltage power supply and power switching applications.
FDD3N50NZTM-VB is a high voltage single-stage N-channel MOSFET in TO252 package, designed for high voltage applications. This MOSFET has a maximum drain-source voltage (VDS) of 650V and can operate stably in a high voltage environment. Its on-resistance (RDS(ON)) is 2750mΩ at VGS of 4.5V and 2200mΩ at VGS of 10V. FDD3N50NZTM-VB uses Plannar technology to provide stable switching performance and is suitable for high voltage power supply and power switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 4A | 2200mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 2750mΩ @ VGS = 4.5V
- 2200mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 4A
- **Technology**: Plannar
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 2750mΩ @ VGS = 4.5V
- 2200mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 4A
- **Technology**: Plannar
Domain and module applications：
Application fields and module examples
1. **High voltage power management**:
The FDD3N50NZTM-VB is ideally suited for high voltage power management systems such as high voltage DC-DC converters and AC-DC power modules due to its high drain-source voltage of 650V. These applications require MOSFETs that can withstand high voltages and operate stably, and the FDD3N50NZTM-VB can meet these needs.
2. **Power switch applications**:
In power switch modules, this MOSFET can effectively control power switches under high voltages. Although its on-resistance is high, it can withstand higher voltages and is ideal for motor drives, battery protection, and other applications that require high voltage switch control.
3. **High voltage inverter**:
Due to the high voltage tolerance of the FDD3N50NZTM-VB, it performs well in high voltage inverters. It can be used in solar inverters and other inverter systems that need to handle high voltages to provide stable switching performance and protection for the system.
4. **High voltage protection circuit**:
In high voltage protection circuit, FDD3N50NZTM-VB can be used as a protection switch or fuse. Its high VDS and relatively high RDS(ON) enable it to effectively control the current in the protection circuit, ensuring the safe operation of the circuit under overvoltage or overcurrent conditions.
FDD3N50NZTM-VB MOSFET is an ideal choice for high voltage applications with its high voltage tolerance and stable switching performance, especially suitable for power management, power switching, high voltage inverters and protection circuits.
1. **High voltage power management**:
The FDD3N50NZTM-VB is ideally suited for high voltage power management systems such as high voltage DC-DC converters and AC-DC power modules due to its high drain-source voltage of 650V. These applications require MOSFETs that can withstand high voltages and operate stably, and the FDD3N50NZTM-VB can meet these needs.
2. **Power switch applications**:
In power switch modules, this MOSFET can effectively control power switches under high voltages. Although its on-resistance is high, it can withstand higher voltages and is ideal for motor drives, battery protection, and other applications that require high voltage switch control.
3. **High voltage inverter**:
Due to the high voltage tolerance of the FDD3N50NZTM-VB, it performs well in high voltage inverters. It can be used in solar inverters and other inverter systems that need to handle high voltages to provide stable switching performance and protection for the system.
4. **High voltage protection circuit**:
In high voltage protection circuit, FDD3N50NZTM-VB can be used as a protection switch or fuse. Its high VDS and relatively high RDS(ON) enable it to effectively control the current in the protection circuit, ensuring the safe operation of the circuit under overvoltage or overcurrent conditions.
FDD3N50NZTM-VB MOSFET is an ideal choice for high voltage applications with its high voltage tolerance and stable switching performance, especially suitable for power management, power switching, high voltage inverters and protection circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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