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FDD3N40TM-VB Product details
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Product Introduction - FDD3N40TM-VB
FDD3N40TM-VB is a high voltage, high current carrying capacity single N-channel MOSFET in TO252 package. The MOSFET can withstand drain-source voltage (VDS) up to 650V and supports gate-source voltage (VGS) of ±30V. It has a high threshold voltage (Vth) of 3.5V and uses Planar technology, which is suitable for high voltage and high power applications. Its relatively high on-resistance (RDS(ON)) is suitable for use in specific high voltage applications.
FDD3N40TM-VB is a high voltage, high current carrying capacity single N-channel MOSFET in TO252 package. The MOSFET can withstand drain-source voltage (VDS) up to 650V and supports gate-source voltage (VGS) of ±30V. It has a high threshold voltage (Vth) of 3.5V and uses Planar technology, which is suitable for high voltage and high power applications. Its relatively high on-resistance (RDS(ON)) is suitable for use in specific high voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 4A | 2200mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON)）**:
- 2750mΩ @ VGS=4.5V
- 2200mΩ @ VGS=10V
- **Drain current (ID)**: 4A
- **Technology type**: Planar
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON)）**:
- 2750mΩ @ VGS=4.5V
- 2200mΩ @ VGS=10V
- **Drain current (ID)**: 4A
- **Technology type**: Planar
Domain and module applications：
Applications and modules
The FDD3N40TM-VB MOSFET is suitable for the following applications and modules:
1. **High voltage power management**: The 650V drain-source voltage of this MOSFET makes it ideal for use in high voltage power management systems such as high voltage switching power supplies and inverters. It can handle large voltages and ensure stable operation of the system.
2. **Industrial equipment**: In industrial power and control systems, the FDD3N40TM-VB can be used as a switching device. Although its on-resistance is relatively high, its high voltage capability makes it suitable for high voltage applications with relatively small currents.
3. **Lighting and power driver**: In lighting control and power driver circuits, this MOSFET can be used for high voltage switching applications such as high voltage lamp control and other high voltage load switching.
4. **Power converter**: In power converters and power management modules, the FDD3N40TM-VB can be used as a high voltage switch to improve system reliability and safety.
By using the FDD3N40TM-VB MOSFET, designers can achieve stable switching control in a high voltage environment to meet the requirements of high voltage applications.
The FDD3N40TM-VB MOSFET is suitable for the following applications and modules:
1. **High voltage power management**: The 650V drain-source voltage of this MOSFET makes it ideal for use in high voltage power management systems such as high voltage switching power supplies and inverters. It can handle large voltages and ensure stable operation of the system.
2. **Industrial equipment**: In industrial power and control systems, the FDD3N40TM-VB can be used as a switching device. Although its on-resistance is relatively high, its high voltage capability makes it suitable for high voltage applications with relatively small currents.
3. **Lighting and power driver**: In lighting control and power driver circuits, this MOSFET can be used for high voltage switching applications such as high voltage lamp control and other high voltage load switching.
4. **Power converter**: In power converters and power management modules, the FDD3N40TM-VB can be used as a high voltage switch to improve system reliability and safety.
By using the FDD3N40TM-VB MOSFET, designers can achieve stable switching control in a high voltage environment to meet the requirements of high voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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