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FDD3860-VB Product details
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Product Introduction
FDD3860-VB is a high-performance unipolar N-channel MOSFET with a TO252 package. This MOSFET is designed for high voltage and high current applications, with high withstand voltage, low on-resistance and excellent thermal performance. Its maximum drain-source voltage is 100V and maximum drain current is 40A, which is suitable for use in power switches, drive circuits and load management applications that require high power and high efficiency. The design goal of FDD3860-VB is to provide high reliability and high-efficiency current control.
FDD3860-VB is a high-performance unipolar N-channel MOSFET with a TO252 package. This MOSFET is designed for high voltage and high current applications, with high withstand voltage, low on-resistance and excellent thermal performance. Its maximum drain-source voltage is 100V and maximum drain current is 40A, which is suitable for use in power switches, drive circuits and load management applications that require high power and high efficiency. The design goal of FDD3860-VB is to provide high reliability and high-efficiency current control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (V_DS)**: 100V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.8V
- **On-resistance (R_DS(ON))**:
- 35mΩ @ V_GS = 4.5V
- 30mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: 40A
- **Technology**: Trench
- **Package**: TO252
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (V_DS)**: 100V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.8V
- **On-resistance (R_DS(ON))**:
- 35mΩ @ V_GS = 4.5V
- 30mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: 40A
- **Technology**: Trench
Domain and module applications：
Applications and modules
The excellent performance of FDD3860-VB enables it to play an important role in several key areas and modules:
1. **High-power switching power supply**: In high-power switching power supply, the high withstand voltage and low on-resistance of FDD3860-VB enable it to efficiently control current and reduce energy loss. It can work stably under high voltage and high current conditions, thereby improving the efficiency and reliability of the entire power system.
2. **Electric vehicle drive system**: In the drive system of electric vehicles, FDD3860-VB can be used as a switching element for motor drive. Its high current carrying capacity and low on-resistance make electric vehicles run more smoothly under heavy loads, while improving the performance of batteries and motors.
3. **DC-DC converter**: This MOSFET performs well in DC-DC converter applications. Its low on-resistance and high voltage withstand capacity can effectively improve the efficiency of the converter and reduce energy loss, and is suitable for high-efficiency power management and power conversion scenarios.
4. **Battery Management System (BMS)**: FDD3860-VB is suitable for use as a protection switch and load switch in a battery management system. Its high withstand voltage and low on-resistance characteristics help manage the battery's charge and discharge process, ensuring the safety and stability of the system.
In summary, FDD3860-VB is a high-voltage, high-current, high-efficiency MOSFET that is very suitable for applications such as high-power switching power supplies, electric vehicle drive systems, DC-DC converters, and battery management systems. Its excellent electrical performance and high reliability make it a key component in these fields.
The excellent performance of FDD3860-VB enables it to play an important role in several key areas and modules:
1. **High-power switching power supply**: In high-power switching power supply, the high withstand voltage and low on-resistance of FDD3860-VB enable it to efficiently control current and reduce energy loss. It can work stably under high voltage and high current conditions, thereby improving the efficiency and reliability of the entire power system.
2. **Electric vehicle drive system**: In the drive system of electric vehicles, FDD3860-VB can be used as a switching element for motor drive. Its high current carrying capacity and low on-resistance make electric vehicles run more smoothly under heavy loads, while improving the performance of batteries and motors.
3. **DC-DC converter**: This MOSFET performs well in DC-DC converter applications. Its low on-resistance and high voltage withstand capacity can effectively improve the efficiency of the converter and reduce energy loss, and is suitable for high-efficiency power management and power conversion scenarios.
4. **Battery Management System (BMS)**: FDD3860-VB is suitable for use as a protection switch and load switch in a battery management system. Its high withstand voltage and low on-resistance characteristics help manage the battery's charge and discharge process, ensuring the safety and stability of the system.
In summary, FDD3860-VB is a high-voltage, high-current, high-efficiency MOSFET that is very suitable for applications such as high-power switching power supplies, electric vehicle drive systems, DC-DC converters, and battery management systems. Its excellent electrical performance and high reliability make it a key component in these fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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