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FDD3690-VB Product details
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FDD3690-VB MOSFET Product Introduction
FDD3690-VB is a high-performance N-channel MOSFET in TO252 package, designed for high voltage and high current applications. It has high drain-source voltage (VDS 100V) and low on-resistance (RDS(ON)), which makes it perform well in situations where high power and high efficiency are required. FDD3690-VB uses advanced Trench technology to provide excellent current handling capability and low power consumption, suitable for a variety of high-power electronic devices and systems.
FDD3690-VB is a high-performance N-channel MOSFET in TO252 package, designed for high voltage and high current applications. It has high drain-source voltage (VDS 100V) and low on-resistance (RDS(ON)), which makes it perform well in situations where high power and high efficiency are required. FDD3690-VB uses advanced Trench technology to provide excellent current handling capability and low power consumption, suitable for a variety of high-power electronic devices and systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
FDD3690-VB MOSFET Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS=4.5V
- 30mΩ @ VGS=10V
- **Drain current (ID)**: 40A
- **Technology**: Trench
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS=4.5V
- 30mΩ @ VGS=10V
- **Drain current (ID)**: 40A
- **Technology**: Trench
Domain and module applications：
FDD3690-VB MOSFET Applications and Modules
The FDD3690-VB MOSFET demonstrates its superior performance in multiple application areas:
1. **Power Conversion and Management**: The FDD3690-VB is ideally suited for efficient DC-DC converters and power management modules due to its high VDS and low RDS(ON). This MOSFET is able to handle higher currents and maintain low power consumption in high voltage environments, improving the efficiency and stability of power systems.
2. **Motor Control**: In motor drive applications, the FDD3690-VB is able to provide strong current support, suitable for controlling and regulating the drive current of the motor. Its high current handling capability and low on-resistance ensure stable operation of the motor under high load conditions.
3. **Automotive Electronics**: This MOSFET performs well in automotive electronic systems, especially in battery management and power control modules. It is able to handle higher current and voltage requirements, ensuring the reliability and performance of automotive electronic systems.
4. **LED driver**: In LED lighting systems, FDD3690-VB is suitable for high-efficiency LED driver applications. Its low RDS(ON) characteristics enable it to effectively control LED current and reduce power consumption while providing stable light output and extending the service life of LEDs.
The FDD3690-VB MOSFET demonstrates its superior performance in multiple application areas:
1. **Power Conversion and Management**: The FDD3690-VB is ideally suited for efficient DC-DC converters and power management modules due to its high VDS and low RDS(ON). This MOSFET is able to handle higher currents and maintain low power consumption in high voltage environments, improving the efficiency and stability of power systems.
2. **Motor Control**: In motor drive applications, the FDD3690-VB is able to provide strong current support, suitable for controlling and regulating the drive current of the motor. Its high current handling capability and low on-resistance ensure stable operation of the motor under high load conditions.
3. **Automotive Electronics**: This MOSFET performs well in automotive electronic systems, especially in battery management and power control modules. It is able to handle higher current and voltage requirements, ensuring the reliability and performance of automotive electronic systems.
4. **LED driver**: In LED lighting systems, FDD3690-VB is suitable for high-efficiency LED driver applications. Its low RDS(ON) characteristics enable it to effectively control LED current and reduce power consumption while providing stable light output and extending the service life of LEDs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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