FDD3682-VB Product details
Product introduction:
The FDD3682-VB is a single N-channel MOSFET in a TO252 package, designed for power electronics applications requiring medium to high voltage and high current. The device has a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V, suitable for operation in higher voltage environments. Its gate threshold voltage (Vth) is 1.8V, which enables it to be turned on at a lower gate voltage. The FDD3682-VB has an on-resistance (RDS(ON)) of 35mΩ and 30mΩ at a gate voltage of 4.5V and 10V, respectively, and supports a drain current (ID) of up to 40A. This MOSFET using Trench technology has excellent switching characteristics and thermal management capabilities, making it suitable for use in high-power and high-efficiency applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS=4.5V
- 30mΩ @ VGS=10V
- **Drain current (ID)**: 40A
- **Technology**: Trench
- **Operating temperature range**: -55°C to 175°C
- **Maximum power dissipation (Ptot)**: 75W
- **Input capacitance (Ciss)**: 2500pF (typical)
- **Switching speed**: With fast switching characteristics, suitable for high frequency applications
Domain and module applications:
1. **Power management system**:
FDD3682-VB can be used for DC-DC converters and load switches in power management systems. Its low on-resistance and high current capability ensure efficient energy conversion and minimal power loss, and is particularly suitable for use in power modules that require high power and high efficiency, such as server power supplies and high-efficiency power adapters.
2. **Automotive electronics**:
In the automotive electronics field, FDD3682-VB can be used for electric power steering systems, electric window controls, and battery management systems. Its high voltage and high current handling capabilities enable it to withstand the rigors of on-board power, providing reliable performance and efficient power control.
3. **Industrial control**:
In industrial automation and control systems, FDD3682-VB can be applied to motor drivers and power converters. Its high current handling capability and excellent switching characteristics make it suitable for use in high-power motor control and high-efficiency industrial equipment, ensuring stable operation and efficient power management.
4. **Consumer electronics**:
FDD3682-VB can also be used in power switches and battery management systems for consumer electronics. Its low on-resistance and high current capability enable it to provide efficient power control in portable devices, improve the energy efficiency and battery life of the device, and is particularly suitable for high-performance consumer electronics such as smartphones and tablets.
In summary, FDD3682-VB MOSFET has a wide range of application potentials in power management, automotive electronics, industrial control, and consumer electronics, and is particularly suitable for power electronics systems that require high voltage, high current, and high efficiency.
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