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FDD3682-NL-VB Product details
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FDD3682-NL-VB Product Introduction
**FDD3682-NL-VB** is a high-performance N-Channel MOSFET in TO252 package, designed for high current and medium voltage applications. Its maximum drain-to-source voltage (VDS) is 100V, suitable for circuits that need to operate stably at high voltages. This MOSFET has a low RDS(ON) of 35mΩ @ VGS=4.5V and 30mΩ @ VGS=10V, respectively, enabling efficient conduction under high current conditions. The threshold voltage (Vth) of FDD3682-NL-VB is 1.8V, allowing it to start conducting at a lower gate-source voltage, thus performing well in low voltage control environments.
**Key Features:**
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Maximum drain-to-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 35mΩ @ VGS=4.5V; 30mΩ @ VGS=10V
- **Maximum drain current (ID)**: 40A
- **Technology**: Trench
**FDD3682-NL-VB** is a high-performance N-Channel MOSFET in TO252 package, designed for high current and medium voltage applications. Its maximum drain-to-source voltage (VDS) is 100V, suitable for circuits that need to operate stably at high voltages. This MOSFET has a low RDS(ON) of 35mΩ @ VGS=4.5V and 30mΩ @ VGS=10V, respectively, enabling efficient conduction under high current conditions. The threshold voltage (Vth) of FDD3682-NL-VB is 1.8V, allowing it to start conducting at a lower gate-source voltage, thus performing well in low voltage control environments.
**Key Features:**
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Maximum drain-to-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 35mΩ @ VGS=4.5V; 30mΩ @ VGS=10V
- **Maximum drain current (ID)**: 40A
- **Technology**: Trench
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- Suitable for medium power applications, providing good heat dissipation performance and stable physical size, easy to integrate into the circuit board.
- **Configuration**: Single-N-Channel
- Suitable for application scenarios that require switching and amplifying current, and can effectively control the flow of current.
- **Maximum drain to source voltage (VDS)**: 100V
- Supports high voltage applications and is suitable for medium voltage circuit design.
- **Gate-source voltage (VGS)**: ±20V
- Allows a higher gate-source voltage range to ensure stable operation under various voltage conditions.
- **Threshold voltage (Vth)**: 1.8V
- It can start to conduct at a lower gate-source voltage, suitable for low voltage control applications.
- **On-resistance (RDS(ON))**:
- **35mΩ @ VGS=4.5V**: At lower gate-source voltage, it still has low on-resistance, suitable for low voltage operation.
- **30mΩ @ VGS=10V**: At higher gate-source voltage, it provides lower on-resistance, improves efficiency and reduces power consumption.
- **Maximum drain current (ID)**: 40A
- High current carrying capability, suitable for switching and amplifying applications with high current loads.
- **Technology**: Trench
- Use Trench technology to achieve low on-resistance and high current handling capability, improving overall performance.
- **Package**: TO252
- Suitable for medium power applications, providing good heat dissipation performance and stable physical size, easy to integrate into the circuit board.
- **Configuration**: Single-N-Channel
- Suitable for application scenarios that require switching and amplifying current, and can effectively control the flow of current.
- **Maximum drain to source voltage (VDS)**: 100V
- Supports high voltage applications and is suitable for medium voltage circuit design.
- **Gate-source voltage (VGS)**: ±20V
- Allows a higher gate-source voltage range to ensure stable operation under various voltage conditions.
- **Threshold voltage (Vth)**: 1.8V
- It can start to conduct at a lower gate-source voltage, suitable for low voltage control applications.
- **On-resistance (RDS(ON))**:
- **35mΩ @ VGS=4.5V**: At lower gate-source voltage, it still has low on-resistance, suitable for low voltage operation.
- **30mΩ @ VGS=10V**: At higher gate-source voltage, it provides lower on-resistance, improves efficiency and reduces power consumption.
- **Maximum drain current (ID)**: 40A
- High current carrying capability, suitable for switching and amplifying applications with high current loads.
- **Technology**: Trench
- Use Trench technology to achieve low on-resistance and high current handling capability, improving overall performance.
Domain and module applications：
Applications and Module Examples
1. **Switching Power Supplies**:
FDD3682-NL-VB is suitable for switching power supplies, because its high current carrying capacity and low RDS(ON) can effectively reduce power consumption and improve efficiency. It can work stably in high voltage environment and improve the overall performance of the power supply.
2. **Motor Drivers**:
In the motor drive circuit, this MOSFET can be used as the main switching element, supporting high current operation, and can stably drive the motor to ensure the efficient operation of the motor.
3. **DC-DC Converters**:
Due to its low on-resistance and high current handling capability, FDD3682-NL-VB is very suitable for use in DC-DC converters. It can effectively regulate voltage and provide stable output current to meet various voltage conversion requirements.
4. **Power Amplifiers**:
This MOSFET can be used in power amplifiers, maintaining high efficiency under high current and high voltage conditions, and is suitable for various wireless communications and audio amplifiers.
5. **LED Drivers**:
In high-power LED lighting systems, FDD3682-NL-VB can be used as an efficient switching element, providing stable current and low power consumption characteristics, ensuring efficient operation and long life of LED modules.
1. **Switching Power Supplies**:
FDD3682-NL-VB is suitable for switching power supplies, because its high current carrying capacity and low RDS(ON) can effectively reduce power consumption and improve efficiency. It can work stably in high voltage environment and improve the overall performance of the power supply.
2. **Motor Drivers**:
In the motor drive circuit, this MOSFET can be used as the main switching element, supporting high current operation, and can stably drive the motor to ensure the efficient operation of the motor.
3. **DC-DC Converters**:
Due to its low on-resistance and high current handling capability, FDD3682-NL-VB is very suitable for use in DC-DC converters. It can effectively regulate voltage and provide stable output current to meet various voltage conversion requirements.
4. **Power Amplifiers**:
This MOSFET can be used in power amplifiers, maintaining high efficiency under high current and high voltage conditions, and is suitable for various wireless communications and audio amplifiers.
5. **LED Drivers**:
In high-power LED lighting systems, FDD3682-NL-VB can be used as an efficient switching element, providing stable current and low power consumption characteristics, ensuring efficient operation and long life of LED modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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