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FDD3670-VB Product details
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FDD3670-VB MOSFET Product Introduction
FDD3670-VB is a high-performance single-N-Channel MOSFET in TO252 package, designed for high voltage and high current applications. This MOSFET has a maximum drain-source voltage (VDS) of 100V and can operate stably in a high voltage environment. Its on-resistance (RDS(ON)) is 35mΩ at VGS of 4.5V and 30mΩ at VGS of 10V, with excellent conductivity. FDD3670-VB uses Trench technology, which provides excellent switching performance and thermal stability, and is very suitable for high-frequency and high-efficiency power control applications.
FDD3670-VB is a high-performance single-N-Channel MOSFET in TO252 package, designed for high voltage and high current applications. This MOSFET has a maximum drain-source voltage (VDS) of 100V and can operate stably in a high voltage environment. Its on-resistance (RDS(ON)) is 35mΩ at VGS of 4.5V and 30mΩ at VGS of 10V, with excellent conductivity. FDD3670-VB uses Trench technology, which provides excellent switching performance and thermal stability, and is very suitable for high-frequency and high-efficiency power control applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS = 4.5V
- 30mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 40A
- **Technology**: Trench
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS = 4.5V
- 30mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 40A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Power converters**:
The FDD3670-VB performs well in high voltage power converters, especially in DC-DC converters and AC-DC power modules. Its 100V VDS and low RDS(ON) values provide efficient power conversion in high voltage environments, reducing energy losses and improving system efficiency.
2. **Motor drive systems**:
This MOSFET is suitable for motor drive applications, especially those that need to handle higher currents. The low on-resistance and high current capability of the FDD3670-VB can reduce switching losses and improve the overall efficiency of motor control systems, making it suitable for industrial motors and automotive motor control.
3. **Power switch modules**:
In power switch modules, the FDD3670-VB can provide stable switching performance and efficient current control. Its high current handling capability and low on-resistance make it an ideal choice for battery management systems, power distribution units, and other power-intensive applications.
4. **High-frequency switching circuit**:
FDD3670-VB is very suitable for high-frequency switching circuits due to its Trench technology. Its excellent switching performance and low on-resistance make it suitable for RF amplifiers and high-frequency converters, which require MOSFETs with good switching characteristics and thermal management capabilities.
FDD3670-VB MOSFET is an ideal choice for a variety of high-efficiency power management and switching applications due to its high voltage tolerance, low on-resistance and high current handling capabilities.
1. **Power converters**:
The FDD3670-VB performs well in high voltage power converters, especially in DC-DC converters and AC-DC power modules. Its 100V VDS and low RDS(ON) values provide efficient power conversion in high voltage environments, reducing energy losses and improving system efficiency.
2. **Motor drive systems**:
This MOSFET is suitable for motor drive applications, especially those that need to handle higher currents. The low on-resistance and high current capability of the FDD3670-VB can reduce switching losses and improve the overall efficiency of motor control systems, making it suitable for industrial motors and automotive motor control.
3. **Power switch modules**:
In power switch modules, the FDD3670-VB can provide stable switching performance and efficient current control. Its high current handling capability and low on-resistance make it an ideal choice for battery management systems, power distribution units, and other power-intensive applications.
4. **High-frequency switching circuit**:
FDD3670-VB is very suitable for high-frequency switching circuits due to its Trench technology. Its excellent switching performance and low on-resistance make it suitable for RF amplifiers and high-frequency converters, which require MOSFETs with good switching characteristics and thermal management capabilities.
FDD3670-VB MOSFET is an ideal choice for a variety of high-efficiency power management and switching applications due to its high voltage tolerance, low on-resistance and high current handling capabilities.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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