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FDD2670-NL-VB Product details
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Product Introduction - FDD2670-NL-VB
FDD2670-NL-VB is a high voltage, high current capability single N-channel MOSFET in TO252 package. The MOSFET can withstand drain-source voltage (VDS) up to 200V and supports gate-source voltage (VGS) of ±20V, which is very suitable for applications requiring high voltage and high power handling. Its threshold voltage (Vth) is 3V, and its design based on Trench technology gives it a lower on-resistance (RDS(ON)), thereby improving overall efficiency and reliability.
FDD2670-NL-VB is a high voltage, high current capability single N-channel MOSFET in TO252 package. The MOSFET can withstand drain-source voltage (VDS) up to 200V and supports gate-source voltage (VGS) of ±20V, which is very suitable for applications requiring high voltage and high power handling. Its threshold voltage (Vth) is 3V, and its design based on Trench technology gives it a lower on-resistance (RDS(ON)), thereby improving overall efficiency and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 30A | 55mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 55mΩ @ VGS=10V
- **Drain current (ID)**: 30A
- **Technology type**: Trench
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 55mΩ @ VGS=10V
- **Drain current (ID)**: 30A
- **Technology type**: Trench
Domain and module applications：
Applications and modules
The FDD2670-NL-VB MOSFET is suitable for the following areas and modules:
1. **High-voltage power management**: The 200V maximum drain-source voltage of this MOSFET makes it very suitable for high-voltage power management systems, such as high-voltage DC-DC converters and power adapters. It can operate stably under high voltage conditions and provides low on-resistance to improve conversion efficiency.
2. **Industrial motor control**: In industrial automation and motor drive applications, the FDD2670-NL-VB can be used to control and drive high-voltage motors. Its high current carrying capacity (30A) makes it excellent in motor control circuits, ensuring efficient and stable motor operation.
3. **Battery Management System (BMS)**: For the management and protection of high-voltage battery packs, the FDD2670-NL-VB is able to handle high current and high voltage requirements, and is suitable for switching and protection circuits in battery management systems.
4. **Photovoltaic Inverter**: In photovoltaic power generation systems, this MOSFET can be used in the switching part of photovoltaic inverters, which helps to achieve efficient energy conversion under high voltage conditions and improve the overall performance and reliability of the system.
FDD2670-NL-VB MOSFET, with its high voltage tolerance and low on-resistance, can provide reliable performance in a variety of high-voltage and high-power applications to meet key design requirements.
The FDD2670-NL-VB MOSFET is suitable for the following areas and modules:
1. **High-voltage power management**: The 200V maximum drain-source voltage of this MOSFET makes it very suitable for high-voltage power management systems, such as high-voltage DC-DC converters and power adapters. It can operate stably under high voltage conditions and provides low on-resistance to improve conversion efficiency.
2. **Industrial motor control**: In industrial automation and motor drive applications, the FDD2670-NL-VB can be used to control and drive high-voltage motors. Its high current carrying capacity (30A) makes it excellent in motor control circuits, ensuring efficient and stable motor operation.
3. **Battery Management System (BMS)**: For the management and protection of high-voltage battery packs, the FDD2670-NL-VB is able to handle high current and high voltage requirements, and is suitable for switching and protection circuits in battery management systems.
4. **Photovoltaic Inverter**: In photovoltaic power generation systems, this MOSFET can be used in the switching part of photovoltaic inverters, which helps to achieve efficient energy conversion under high voltage conditions and improve the overall performance and reliability of the system.
FDD2670-NL-VB MOSFET, with its high voltage tolerance and low on-resistance, can provide reliable performance in a variety of high-voltage and high-power applications to meet key design requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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